Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Crystal imprinting methods for fabricating substrates with thin active silicon layers










Image Number 6 for United States Patent #7803700.

Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a plurality of amorphous silicon features, and re-growing the amorphous silicon features to define a thin active silicon layer consisting of regrown silicon features. The amorphous silicon features may be regrown such that a number have a first crystal orientation and another number have a different second crystal orientation.








 
 
  Recently Added Patents
Combination of the application of antibodies for immunostimulation together with glucocorticoids
Toy
(Meth)acrylic resin composition, imidized (meth)acrylic resin composition, and film obtained by molding them
Printable and printed articles
Multiple carrier compression scheme
Method for transmitting a signal
Economic filtering system for delivery of permission based, targeted, incentivized advertising
  Randomly Featured Patents
Gas burner for dryer
Architecture for dependability enhancement of wireless base stations
Honeycomb structure having stiffening ribs and method and apparatus for making same
Fluid system device
Artificial fish bed
Heat sink clip with pressing cam
Free piston engine pump with energy rate smoothing
Hydroconversion sulfur-containing lube feedstock using a sulfur resistant catalyst
Ultrasonic diagnostic imaging systems with power modulation for contrast and harmonic imaging
Cavity mirror for optically-pumped vertical-cavity surface-emitting laser (VCSEL)