Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Crystal imprinting methods for fabricating substrates with thin active silicon layers










Image Number 6 for United States Patent #7803700.

Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a plurality of amorphous silicon features, and re-growing the amorphous silicon features to define a thin active silicon layer consisting of regrown silicon features. The amorphous silicon features may be regrown such that a number have a first crystal orientation and another number have a different second crystal orientation.








 
 
  Recently Added Patents
Visibility radio cap and network
Random access for wireless multiple-access communication systems
Thin film transistor and flat panel display device including the same
Escutcheon
Method and system for shared high speed cache in SAS switches
Method for selective deposition of a semiconductor material
Integrated circuits with magnetic core inductors and methods of fabrications thereof
  Randomly Featured Patents
Refrigerant recovery device
Self-service system having transaction predictive capability and method of using
Isolated human synthase proteins
Microwave oven having uneven bottom wall oven cavity
Structure analytic program
Apparatus and method for removing liquid from liquid bearing material
Electronic compass
RMS-DC converter having gain stages with variable weighting coefficients
Hydraulic periphery pumps
Fluorescent lamp