Resources Contact Us Home
Crystal imprinting methods for fabricating substrates with thin active silicon layers

Image Number 6 for United States Patent #7803700.

Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a plurality of amorphous silicon features, and re-growing the amorphous silicon features to define a thin active silicon layer consisting of regrown silicon features. The amorphous silicon features may be regrown such that a number have a first crystal orientation and another number have a different second crystal orientation.

  Recently Added Patents
Device and method for quantizing and inverse quantizing LPC filters in a super-frame
Data-conditioned encryption method
Dispensing of restricted goods
Support core for cold shrink tube
System and method for monitoring network activity
Imidazole-5-carboxylic acid derivatives, the preparation method therefor and the uses thereof
Recovering a database to any point-in-time in the past with guaranteed data consistency
  Randomly Featured Patents
Golf putter
Emergency shutoff valve exerciser for steam turbine and methods for installing and operating same
Folding step ladder
Method of manufacturing reclosable packaging having tamper-evident feature
Process for the control of inhibitors distribution in the production of grain oriented electrical steel strips
Mounting arrangement for fuel rack in fuel injection pump
Decorative straps for shoes
Method of producing synthetic resin from waste products
Portable all-encompassing hand and multi-purpose atomizing dispenser