Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Crystal imprinting methods for fabricating substrates with thin active silicon layers










Image Number 6 for United States Patent #7803700.

Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a plurality of amorphous silicon features, and re-growing the amorphous silicon features to define a thin active silicon layer consisting of regrown silicon features. The amorphous silicon features may be regrown such that a number have a first crystal orientation and another number have a different second crystal orientation.








 
 
  Recently Added Patents
Arrays of optical confinements and uses thereof
Semiconductor device
System, method and program product for guiding correction of semantic errors in code using collaboration records
High power fiber amplifier with stable output
Light powered hearing aid
Instance management of code in a database
Method of fabricating solid electrolytic capacitor and solid electrolytic capacitor
  Randomly Featured Patents
Anti-fogging multilayered film and bag produced therefrom for packaging vegetables and fruits
Production of pentafluoroethane
Automated rock burner
Refrigerator and control method for the same
Catalytic cracking system
Apparatus for the detection of diabetes and other abnormalities affecting the lens of the eye
Box foundation with included drawers
Support element for securing a work piece on a supporting surface
Porous hollow fiber
Anti-viral activity of cathelicidin peptides