Resources Contact Us Home
Crystal imprinting methods for fabricating substrates with thin active silicon layers

Image Number 6 for United States Patent #7803700.

Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a plurality of amorphous silicon features, and re-growing the amorphous silicon features to define a thin active silicon layer consisting of regrown silicon features. The amorphous silicon features may be regrown such that a number have a first crystal orientation and another number have a different second crystal orientation.

  Recently Added Patents
Cantilevered probe detector with piezoelectric element
Methods and apparatus for adapting network characteristics in telecommunications systems
System and method for creating, managing and trading hedge portfolios
Identification of biomarkers in biological samples and methods of using same
High damage threshold frequency conversion system
Light barrier and method for detecting objects
Self-diagnostic method and system for implantable cardiac device
  Randomly Featured Patents
Diethynyl monomers and polymers thereof
Chloride oxidation of dyes in vat and sulfur dyed textiles
Semiconductor wafer and method of fabricating the same
Epoxy-functional polysiloxane polymers
Air purification process
Washing agent dispenser for dishwasher
Apparatus for shaping counters in making shoes
Device for quick connection of a tube to a rigid element
Automated electrophoresis gel manipulation apparatus
Self-aligning optical connector and method for using the same