Resources Contact Us Home
Crystal imprinting methods for fabricating substrates with thin active silicon layers

Image Number 6 for United States Patent #7803700.

Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a plurality of amorphous silicon features, and re-growing the amorphous silicon features to define a thin active silicon layer consisting of regrown silicon features. The amorphous silicon features may be regrown such that a number have a first crystal orientation and another number have a different second crystal orientation.

  Recently Added Patents
Apparatus, method and program for image receipt, processing, conversion, and delivery to and from a plurality of external apparatuses
Low-coupling oxide media (LCOM)
Self-service channel marketplace
Method and system for calibrating laser profiling systems
Battery pack with interchangeable circuit substrates
Semiconductor device
Stage drive method and stage unit, exposure apparatus, and device manufacturing method
  Randomly Featured Patents
Liquid crystal display having capacitance-coupled floating electrode
Internal locking arrangement for a switch machine
Superconducting magnet correction coil adjustment mechanism
Method and apparatus for delivering a colonic lavage
Exhaust diffuser for a truck
Solvent dewatering composition
Halohydrin commpounds
Feedback control device
Method for improvidng the spatial resolution in an integrated adaptive optics apparatus