Resources Contact Us Home
Semiconductor laser diode

Image Number 2 for United States Patent #7796669.

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

  Recently Added Patents
Method to prevent hyper frame number de-synchronization in a wireless communication system
Method and apparatus for policy-based network access control with arbitrary network access control frameworks
Semiconductor device
Determination of statistical upper bound for estimate of noise power spectral density
Method and apparatus for managing backup channel in multi-channel environment
Carrying case
Provision of downlink packet access services to user equipment in spread spectrum communication network
  Randomly Featured Patents
Color television image processing apparatus and method having color fading reduction function
Anti-VEGF antibodies
Apparatus for automatic adjustment of an inductor in a tuned circuit
Alignment device utilizing components responsive to gravity
Steering system
Ring oscillator circuit
Protected image resolution conversion
Network switch with backup power supply
Oil filter wrench and packaging therefor
Portable spring type impact ball pitching device