Resources Contact Us Home
Semiconductor laser diode

Image Number 2 for United States Patent #7796669.

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

  Recently Added Patents
Remotely provisioned wireless proxy
Sonic fast-sync system and method for bluetooth
Portable hand-held multi-function device for storing, managing and combining rewards
Power control arrangement for long term evolution time division duplex method and apparatus
Flash drive
System for wireless local area network (WLAN) transmission and for coexistence of WLAN and another type of wireless transmission and methods thereof
Display device substrate, method for manufacturing the same, display device, method for forming multi-layer wiring, and multi-layer wiring substrate
  Randomly Featured Patents
Wide channel getter device
LED lamp with prismatic cover lens
Non-volatile programmable interconnection circuit
Mineral reinforced polyamides
Substrate polishing apparatus
Method for producing a tin-nickel alloy film
Electronic device package and method for fabricating the same
Predicting or recommending a users future location based on crowd data
Solar heating unit
Security systems and methods with random and multiple change-response testing