Resources Contact Us Home
Semiconductor laser diode

Image Number 2 for United States Patent #7796669.

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

  Recently Added Patents
Pressure roller and fixing device equipped with the same
Semiconductor device
Delivery of captions, content advisory and other data through digital interface
Method and apparatus for controlling cardiac resynchronization therapy using cardiac impedance
Current collector for lead acid battery
Resin composition and molded article
Methods for forming patterned structures
  Randomly Featured Patents
Method of producing a pole piece with improved magnetic domain structure
Tn5 transposase mutants and the use thereof
Laser annealing mask and method for smoothing an annealed surface
Fluorine-free optical glass
Compact hunting device
Arrangement for automatically controlling the travel speed of yarns, filaments, and the like in machines processing the same
Hybrid control device
Orientation device and methods for mail processing
Coated abrasive product incorporating selective mineral substitution
Wagon vehicle with interchangeable integral side panels