Resources Contact Us Home
Semiconductor laser diode

Image Number 2 for United States Patent #7796669.

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

  Recently Added Patents
X2 10GBASE-T transceiver with 1 Gigabit side-band support
LED package chip classification system
System and method for stranded file opens during disk compression utility requests
Field emission cathode device and field emission display using the same
People engine optimization
Mask blank, transfer mask, and film denseness evaluation method
Resin composition and molded article
  Randomly Featured Patents
Bioremediation of contaminated groundwater
MOS-type semiconductor device and method for making same
Dynamic intelligent mirror host selection
Method for forming thin film resistor and terminal bond pad simultaneously
Powered aquatic vehicle
Imaging unit and mobile electronic device
Sealing bushing for a member rotatable about an axis and extending through a wall of a housing
Methods and apparatus for decoding LDPC codes
Magnetic nanoparticle complex
Boxed and self-supportive calendar