Resources Contact Us Home
Semiconductor laser diode

Image Number 17 for United States Patent #7796669.

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

  Recently Added Patents
Expression of dirigent gene EG261 and its orthologs and paralogs enhances pathogen resistance in plants
Sub-resolution assist feature repair
Vehicle-mounted camera stabilized passively by vibration isolators
Detection of code-based malware
Adsorptive molded parts and the use thereof
Catalyst composition with nanometer crystallites for slurry hydrocracking
Terminal for flat test probe
  Randomly Featured Patents
Multimedia content delivery using pre-stored multiple description coded video with restart
Secure document of value and method of manufacturing same
Puddle and footwell lighting integrated into a speaker grille
Continuous noninvasive blood pressure measuring apparatus and method
Webbing tension device
Process for the production of three-dimensionally crosslinked polymeric materials having broad cholesteric reflection bands, and filters, reflectors and polarizers produced by this process
Cylinder head for spark ignition internal combustion engine
Gun sight for shooting moving target
Method of infiltrating enamel lesions
Method and apparatus for case building and presentation of healthcare procedures