Resources Contact Us Home
Semiconductor laser diode

Image Number 17 for United States Patent #7796669.

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

  Recently Added Patents
Organizing collaborative annotations
Determination of customer proximity to a register through use of sound and method thereof
Automatic detection of channel bandwidth
Systems and methods for detecting bifurcations
Single ended primary inductor converter with over-current and/or over-voltage protection and method for controlling the same
Audio decoding apparatus and audio decoding method performing weighted addition on signals
Interactive design, synthesis and delivery of 3D character motion data through the web
  Randomly Featured Patents
Verifiable chain of transfer for digital documents
Eyeglass and eyeglass frame display fixture and system
Methods of forming a pattern on a substrate
Method of designing custom circuit device using scheduling clock cycles
Adjustable bra
Roaster tray
Sandal with back and top strap
Device and method for marking ophthalmic lenses and molds
Enzymatically catalysed signal amplification
Release device for a friction clutch