Resources Contact Us Home
Semiconductor laser diode

Image Number 17 for United States Patent #7796669.

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

  Recently Added Patents
Systems and methods for unchoked control of gas turbine fuel gas control valves
Fluorescent proteins
Pyrazole kinase modulators and methods of use
Wireless subscriber managing storage of HARQ packets
Method for reserving network bandwidth for versioned network services
  Randomly Featured Patents
Dynamic performance monitoring of long slender structures using optical fiber strain sensors
Bath tub
Apparatus for treating clothing
Fibrous marker and intracorporeal delivery thereof
Idle speed control actuator
Coverlayer based on functional polymers
Cleaning process for radioactive machine shop turnings
Intermediates of peptide antagonists of neurotensin
Method for programming a memory arrangement and programmed memory arrangement
Device for detecting a pulsating quantity