Resources Contact Us Home
Semiconductor laser diode

Image Number 17 for United States Patent #7796669.

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

  Recently Added Patents
Pull through coronary sinus pacing lead
Home appreciation participation notes
Sample holder and method for treating sample material
Motor and disk drive apparatus
Silicas and alkali metal salt compositions, detergents formed from such compositions and method of forming such compositions and detergents
Heterocyclic compounds as CCR2B antagonists
  Randomly Featured Patents
Radar system and method of operating same
Transition state detecting device and measuring device using the same
Method for filtering air in laminar flow
Adaptive overload protection of electric motors and static switching drives
High data rate interface apparatus and method
Electrical connection box
Method for obtaining a purified hydrofluoroalkane, purified hydrofluoroalkane, use of same and method for analysing same
Greeting card
Scanning radiation sensor with automatic focus control for optimal focus and method
Blending apparatus