Resources Contact Us Home
Semiconductor laser diode

Image Number 12 for United States Patent #7796669.

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

  Recently Added Patents
Semiconductor device
Drug comprising as the active ingredient proliferative vector containing survivin promoter
Related news articles
Low offset, fast response voltage controlled current source and controlling method thereof
Adaptive control for uncertain nonlinear multi-input multi-output systems
Dual work function recessed access device and methods of forming
Method and system for Bluetooth low power link layer connection setup
  Randomly Featured Patents
Methods and compositions for the in-situ thermal stimulation of hydrocarbons using peroxide-generating compounds
Transparent protocol independent data compression and encryption
Ice making container apparatus
Method for filling a two-chamber-tube and device for carrying out the method
Dimmer for use with a three-way switch
Window attachment clip component
System and method for multicasting packets in a subscriber network
Ablatively photodecomposable compositions
Rivet head caulking machine
Adhesive tape