Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Nitride semiconductor device










Image Number 6 for United States Patent #7795738.

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.








 
 
  Recently Added Patents
Matching engine for comparing data feeds with user profile criteria
Method of fabricating display device
Display sheet, display device, and electronic apparatus
Systems and methods for providing power and data to lighting devices
Composite aircraft floor system
Sparse network almanac
Blow moulding machine with compressed air recycling
  Randomly Featured Patents
Fragile water mark printed with two component inks and process
Liquid cooled rotating electrical machine
Method of treating cardiac insufficiency using angiotensin-converting enzyme inhibitors
Optical analysis device
Movable roadway barrier
Hook rack
Human kinases and polynucleotides encoding the same
Capsule guiding system
Piezo-electric actuator operated press
Voltage pump and a level translator circuit