Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Nitride semiconductor device










Image Number 6 for United States Patent #7795738.

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.








 
 
  Recently Added Patents
Advanced joint detection in a TD-SCDMA system
Handbag
Systems and methods for identifying malicious domains using internet-wide DNS lookup patterns
Toy
Automated difference recognition between speaking sounds and music
Method of manufacturing a plurality of electronic assemblies
Controller for soldering iron
  Randomly Featured Patents
Pneumatic valve and regulator
Food freezing apparatus
System for digitizing a scanned signal indicating changes in signal intensity
Electromagnetic actuator for controlling a valve of an internal combustion engine and internal combustion engine equipped with such an actuator
Conversion of fluorocarbons
Circuit arrangement for wirelessly exchanging data and RFID chip card device
Asphalt-block copolymer paving composition
Tubular material based on a fabric-reinforced resin, and a bicycle or similar vehicle frame constructed with such a material
Mattress hugging bed rail
Synthetic compounds and derivatives as modulators of smoking or nicotine ingestion and lung cancer