Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Nitride semiconductor device










Image Number 6 for United States Patent #7795738.

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.








 
 
  Recently Added Patents
Masking method and apparatus
Image enhancement based on multiple frames and motion estimation
Peer to peer (P2P) missing fields and field valuation feedback
Methods and systems for providing a business repository
Method and system for parallelizing data copy in a distributed file system
Authoring method, authoring device and program
Method and apparatus for controlling cardiac resynchronization therapy using cardiac impedance
  Randomly Featured Patents
Nozzle device for pump
Ink jet head, cartridge and ink tank therefor
Ink jet printer
Atomic absorption spectroscopy photometer
Display device
Pressure roll for fusing operation
Foam cement highway sound barrier
Clamp for mounting children's articles to a surface
Composite sheet materials and processes for manufacturing same
Device for transporting loads between various elevations