Resources Contact Us Home
Nitride semiconductor device

Image Number 6 for United States Patent #7795738.

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.

  Recently Added Patents
Image scanner and image forming apparatus
3,7-diamino-10H-phenothiazine salts and their use
Communication apparatus, integrated circuit, and communication method
Methods circuits apparatuses and systems for facilitating access to online content
Reconstruction of deforming surfaces by canceling ambient occlusion and refining 3-D shape
Cellulose derivative and hydrogel thereof
Navigation device, navigation method, and navigation program
  Randomly Featured Patents
Cigarette manufacturing machine of the double tobacco rod type
Coil nailing device for construction finishing materials
Detector for locating the interfacial boundary level between two liquids
Diesel fuel exhaust gas filter
High functionality amine compounds and uses therefor
Method for manufacturing multilayer ceramic capacitor
Process for the production of 2-substituted chromones
Interferometeric lightning ranging system
Compression ignition internal combustion engine having combustion chambers for high ignition pressures