Resources Contact Us Home
Nitride semiconductor device

Image Number 6 for United States Patent #7795738.

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.

  Recently Added Patents
Systems, devices, methods, and compositions including fluidized x-ray shielding compositions
Method for enhanced subsurface electromagnetic sensitivity
Visibility radio cap and network
Organic dual-gate memory and method for producing same
Multilayer films having reduced curling
Rechargeable battery
Method for repairing or replacing damaged tissue
  Randomly Featured Patents
Method and system for downloading data to mobile terminals and for implementing data sharing between mobile terminals
Sealable recovery vessel system and method for accessing valved containers
Method and system for synchronizing a server and an on-demand database service
Biochemical analyzer and method of controlling internal temperature of the biochemical analyzer
Method and device for obtaining reserve time for a cooling system
Receiving device
Device for mounting a flat package on a circuit board
Connector plug
Control apparatus for conveyor of particulate material
Assay testing device