Resources Contact Us Home
Phase change memory device and manufacturing method

Image Number 10 for United States Patent #7786460.

A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.

  Recently Added Patents
Medicament delivery device and a method of medicament delivery
Pyridazine compounds for controlling invertebrate pests
Case for electronic device
Vehicle control apparatus
Information processing apparatus, method for controlling information processing apparatus, and storage medium
MEMS structure and method for making the same
System, method, and computer readable medium for a force-based wheelchair joystick
  Randomly Featured Patents
Shaft supporting structure for an axial fan
Machine for drying and mixing granular materials
Transit schedule generating method and system
Damper construction
Hydrostatically compensated deep sea probe with shear strain gauges
Fluid interface
Combined thermocouple and thermopile capable of generating multiple EMF signals
Railway locomotive truck with resilient suspension
Method for preparing cerium carbonate and cerium oxide
Arterial catherization device