Resources Contact Us Home
Phase change memory device and manufacturing method

Image Number 10 for United States Patent #7786460.

A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.

  Recently Added Patents
Nuclear reactor building and construction method thereof
Hybrid interconnect scheme including aluminum metal line in low-k dielectric
Fabrication of high gradient insulators by stack compression
Azole derivatives, methods for producing the same, intermediate thereof, agro-horticultural agents
Ni-, Co-, and Mn- multi-element doped positive electrode material for lithium battery and its preparation method
Plural component proportioner
Semiconductor device having a multilevel interconnect structure and method for fabricating the same
  Randomly Featured Patents
Wire and cable dispensing container and systems
Power saving method for multiple channels per carrier (MCPC) satellite transmission
Electrochemical device
Compartmented waste receptacle
Method and apparatus for fault-tolerant computer system having expandable processor section
Cascade power system
Self-realigning vacuum pickup arrangement
Emulsifier mixing cell
Circuit for preventing latch-up of parasitic thyristor formed in CMOS integrated circuit
Controller for a high frequency agitation source