Resources Contact Us Home
Phase change memory device and manufacturing method

Image Number 10 for United States Patent #7786460.

A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.

  Recently Added Patents
System and method for combined I/Q generation and selective phase interpolation
Methods for integrating the production of cellulose nanofibrils with the production of cellulose nanocrystals
Resolution setting apparatus, resolution setting method, and recording medium recording a resolution setting program when a television is used as a monitor of a computer
Charged-particle beam lens
Sterilizable film for aseptic packaging
Power converter and method of power conversion
  Randomly Featured Patents
Differential simultaneous bi-directional receiver
Polymeric compositions for nonlinear optics
Computer memory device
Aqueous coating compositions
Surface acoustic wave touch panel, electrooptical device, and electronic apparatus having spacers between first and second touch panel substrates
Antibody antagonists of VE-cadherin without adverse effects on vascular permeability
Air-conditioning systems
Rudbeckia plant named `Pot Of Gold`
Apparatus for carrying out automatic play in synchronism with playback of data recorded on recording medium
Height-adjustable support for a display device