Resources Contact Us Home
Method of fabricating an integrated circuit

Image Number 15 for United States Patent #7759242.

A method of fabricating an integrated circuit, including the steps of forming a first mask layer in the form of a hard mask layer including a plurality of first openings and a second mask layer with at least one second opening which at least partially overlaps with one of the first openings, wherein the at least one second opening is generated lithographically; and at least two neighboring first openings are distanced from each other with a center to center pitch smaller than the resolution limit of the lithography used for generating the second opening.

  Recently Added Patents
Flame-proofed thermoplastic compositions
Compounds, compositions and use
Polymer compositions and nonwoven compositions prepared therefrom
Commissioning incoming packet switched connections
Efficient relay automatic repeat request procedure in broadband wireless access system
Shoe bag
Multiple CQI feedback for cellular networks
  Randomly Featured Patents
Digital to analog converter system employing plural digital to analog converters which is insensitive to resistance variations
Catalysts for polymerizing propylene in a high temperature solution process
Golf club woodhead with optimum aerodynamic structure
Dispenser with an air pump mechanism
Conveyor belt scraper units
Fitting system
Musical harmony generation from polyphonic audio signals
Thermostat with automatic accelerator
Thumb joint prosthesis