Resources Contact Us Home
Method of fabricating an integrated circuit

Image Number 15 for United States Patent #7759242.

A method of fabricating an integrated circuit, including the steps of forming a first mask layer in the form of a hard mask layer including a plurality of first openings and a second mask layer with at least one second opening which at least partially overlaps with one of the first openings, wherein the at least one second opening is generated lithographically; and at least two neighboring first openings are distanced from each other with a center to center pitch smaller than the resolution limit of the lithography used for generating the second opening.

  Recently Added Patents
Conductor for transmitting electrical power
Method for the synthesis of an array of metal nanowire capable of supporting localized plasmon resonances and photonic device comprising said array
Wireless communication method, wireless communication system, and mode switching method
System and method for creating a build set and bill of materials from a master source model
Herbicide composition having improved effectiveness, method of preparation and use
Deposited conductive layers for leads of implantable electric stimulation systems and methods of making and using
Fuel basket spacer, apparatus and method using the same for storing high level radioactive waste
  Randomly Featured Patents
Computer enclosure
Human genes and gene expression products V
Drug releasing elastic band and method
Gift packaging container
Piperidine derivatives, process for preparation thereof, and pharmaceutical composition for alzheimer's disease containing the same
Nanostructure quick-switch memristor and method of manufacturing the same
Receiver for a memory controller and method thereof
Method for forming a weldable mount for fuel systems component
Thermal transfer ribbon including a UV-crosslinkable protection layer
Printer media preheater and method