Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for improved planarization in semiconductor devices










Image Number 6 for United States Patent #7696094.

A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectric material. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer.








 
 
  Recently Added Patents
Front face of vehicle wheel
Systems and methods for economic retirement analysis
Sensor interface engineering
Location estimation of wireless terminals through pattern matching of deduced signal strengths
Factor IXa crystals, related complexes and methods
Parallel processing computer systems with reduced power consumption and methods for providing the same
Data storage device with surface ornamentation
  Randomly Featured Patents
Disk method for producing the same and device for carrying out said method
Hanging frame assembly for ceiling fan
Blast furnace tuyere
Identity authentication and shared key generation method
Paper holder mounting mechanism
HDD having both DRAM and flash memory
Web handling cylinder with modulated tension loss
Audio-visual navigation and communication dynamic memory architectures
Compositions substrate for removing etching residue and use thereof
Error correction in speech recognition by correcting text around selected area