Resources Contact Us Home
Method for improved planarization in semiconductor devices

Image Number 6 for United States Patent #7696094.

A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectric material. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer.

  Recently Added Patents
Documentation roadmaps and community networking for developers on large projects
High productivity single pass scanning system
Retrievable outgoing audio messaging
Techniques for data assignment from an external distributed file system to a database management system
Pyroelectric detector, pyroelectric detection device, and electronic instrument
Demand based power allocation
Avoiding conflict in update in distributed environment employing multiple clients
  Randomly Featured Patents
Package for sodium-sulfur battery
Hot-air grills
System and method of modifying communications policy settings in a wireless network
Apparatus and method of sealing an envelope in a document security apparatus
Use of acetals for isolation of nucleic acids
Substituted dihydrobenzopyran-2-carboxylates
Moldable warp knitted fabric and method of forming a seamless molded fabric portion therefrom
Developer container, developing apparatus, and image forming apparatus
Process for oxidation of 4-amidotetrahydrobenzo [b]-thiophenes to 7-keto derivatives with cobaltic salts
Polycyclic full quaternary nitrogen-heterocyclic phosphonates