Resources Contact Us Home
Method for improved planarization in semiconductor devices

Image Number 6 for United States Patent #7696094.

A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectric material. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer.

  Recently Added Patents
Herbicide composition having improved effectiveness, method of preparation and use
Actuator, actuator structure and method of manufacturing actuator
Integrated circuit testing with power collapsed
Preserving and handling native data in hybrid object trees
Method of transmitting and receiving a paging message in a mobile communication system
Fuel-based injection control
  Randomly Featured Patents
Hard-disk drive
Hand based weight distribution system
Tape printing apparatus having a tape discharge mechanism and method of discharging a tape
Touch operated control system for electrical devices
Centrifugal brake for a fishing reel
Trailer hitch
Inactivated infectious bronchitis vaccine for poultry
Method of restoring semiconductor device performance
Foldable hot tub seat
Translation look-aside buffer including a single page size translation unit