Resources Contact Us Home
Method for improved planarization in semiconductor devices

Image Number 6 for United States Patent #7696094.

A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectric material. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer.

  Recently Added Patents
Particulate filter with hydrogen sulphide block function
Particle-loaded membrane for solid-phase-extraction and method for performing SALDI-MS analysis of an analyte
Storage system, control method therefor, and program
Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus
Related news articles
Lubricating oil compositions
Stable file system
  Randomly Featured Patents
Distributed object-oriented appliance control system
Processor static mode disable circuit
Document feeder method
Method and device for endoluminal disruption of venous valves
Managing personal digital assets over multiple devices
Auto locked mechanism
Silylated poly(vinyl)phenol polymers
Paper sunglasses
Method of identifying inhibitors of the Jak-Stat signal transduction pathway
Cooling pad system