Resources Contact Us Home
Method for improved planarization in semiconductor devices

Image Number 6 for United States Patent #7696094.

A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectric material. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer.

  Recently Added Patents
Gas cap removal tool
Method for treating hyperglycemia
Aqueous flowable concentrate compositions of a microencapsulated dinitroaniline herbicide
Display device and method of repairing display device
Signal conversion control circuit for touch screen and method thereof
Channel marking for chip mark overflow and calibration errors
  Randomly Featured Patents
Aluminum flatbed with unique front connection
Combined base transceiver station and base station controller handoff
Smart thermometer
Surface passivated alkali halide infrared windows
Flow controller and support therefor, and flow controller-noise reducer combinations
Personal watercraft with brakes
Foil based semiconductor package
Separation system for preparing high .alpha.-glycosyl-L-ascorbic acid
Method and apparatus for directional solidification of integral component casting
Front passenger airbag device