Resources Contact Us Home
Method for improved planarization in semiconductor devices

Image Number 6 for United States Patent #7696094.

A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectric material. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer.

  Recently Added Patents
High-resolution, active reflector radio frequency ranging system
Dynamically reconfigurable systolic array accelorators
Tint block image generation program and tint block image generation device
Fusing device to prevent overheating of a heating member and image forming apparatus having the same
Portable electronic device housing including hinge
Fuel basket spacer, apparatus and method using the same for storing high level radioactive waste
Plants and seeds of hybrid corn variety CH717591
  Randomly Featured Patents
Fabricating a memory cell with an improved capacitor
Noncontact tonometer
Method for stimulating wells completed in oil bearing earth formations
Inductive powering for a mobile communication device and a radio frequency integrated circuit
Cytokine zalpha11 ligand fusion proteins
Electrostatic spray gun for coating material
Method of designing a motor vehicle
Ultrafine-grained titanium for medical implants
Methods for altering one or more parameters of a measurement system
Phenol-formaldehyde resole resins, method of manufacture, methods of use, and articles formed therefrom