Resources Contact Us Home
Method of forming a silicon layer and method of manufacturing a display substrate by using the same

Image Number 3 for United States Patent #7696091.

A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF.sub.4) gas, a nitrogen trifluoride (NF.sub.3) gas, SiF.sub.4--H.sub.2 gas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF.sub.4), hydrogen (H.sub.2) and argon (Ar).

  Recently Added Patents
Apparatus and method for connection control with media negotiation successful on different media formats
Method and apparatus for charging a power pack of a portable electronic device
Vibration disturbance estimation and control
System and method for creating, managing and trading hedge portfolios
Image processing apparatus, control method for the same, and storage medium
Electromagnetic probe for measuring properties of a subsurface formation
Interlock apparatus for vacuum circuit breaker
  Randomly Featured Patents
Lamp with decorative faceplate and prismatic housing
Frequency multiplier circuit and method using above circuit for a period time division in subperiods, for a brushless motor
Liquid crystal driver and liquid crystal display device using the same
Word processing apparatus
Display device with adjustable attachment means
Optical isolators employing wavelength tuning
Mist-refining humidification system having a multi-direction, mist migration path
Method of making ESD protection device
CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
Organophilic clay gellant and processes for preparing organophilic clay gellants