Resources Contact Us Home
Method of forming a silicon layer and method of manufacturing a display substrate by using the same

Image Number 3 for United States Patent #7696091.

A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF.sub.4) gas, a nitrogen trifluoride (NF.sub.3) gas, SiF.sub.4--H.sub.2 gas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF.sub.4), hydrogen (H.sub.2) and argon (Ar).

  Recently Added Patents
Power converter and method including noise suppression by controlling phase shifting of converter cells
Topology arrangement for achieving reliable communication in wireless automotive networks
Generator with a segmented stator
Focusing apparatus that effectively sets a focus area of an image when a focusing mode is changed
Method of operating an election ballot printing system
Paging of a user equipment (UE) within a wireless communications system
Method and apparatus for linking a web browser link to a promotional offer
  Randomly Featured Patents
Expandable data processing chassis and method of assembly thereof
Heat exchanger
Microcomputer traffic counter and data collection method
Phenolic polymers made by aralkylation reactions
Technique for implementing an add/drop collector for supporting dedicated and shared timeslotting
Nanostructured low-Cr Cu-Cr coatings for high temperature oxidation resistance
Method for driving plasma display panel with display discharge pulses having different power levels
Method and apparatus for monitoring the collateral risk analysis commodity lenders
Sequence checking device
Boolean trajectory solid surface movement method