Resources Contact Us Home
Method of forming a silicon layer and method of manufacturing a display substrate by using the same

Image Number 3 for United States Patent #7696091.

A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF.sub.4) gas, a nitrogen trifluoride (NF.sub.3) gas, SiF.sub.4--H.sub.2 gas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF.sub.4), hydrogen (H.sub.2) and argon (Ar).

  Recently Added Patents
Leaky wave mode solar receiver
Buckle (tube)
Identifying users of remote sessions
Image processing device and information storage medium including motion vector information calculation
Architectural panel with Tarwe and grass
Use of physical deformation during scanning of an object to generate views of the object
  Randomly Featured Patents
Integrated memory and method for checking the functioning of an integrated memory
Textile filaments and yarns
Exercise apparatus
Skin care applicator handle
Method of forming lateral bipolar transistors
Nail file
No and low fat salad dressing compositions
Multipurpose control mechanism for a marine vessel
Active spam testing system