Resources Contact Us Home
Method of forming a silicon layer and method of manufacturing a display substrate by using the same

Image Number 3 for United States Patent #7696091.

A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF.sub.4) gas, a nitrogen trifluoride (NF.sub.3) gas, SiF.sub.4--H.sub.2 gas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF.sub.4), hydrogen (H.sub.2) and argon (Ar).

  Recently Added Patents
Analyte assaying by means of immunochromatography with lateral migration
Method and apparatus for cutting high quality internal features and contours
System and method of interfacing co-processors and input/output devices via a main memory system
Parallel power inverter motor drive system
Semiconductor device with hetero-junction bodies
Solution based precursors
Flow cytometer method and apparatus
  Randomly Featured Patents
Write-once polymer memory with e-beam writing and reading
Direct ignition of pulverized coal
Photostabilization of retinoids with alkoxycrylene compounds
Electrical connector having an improved outer conductive shell
Skate boot construction
Production of organic vanadates
Loading device having multiple tongs for handling lumber and the like
Angiogenic agents from plant extracts, gallic acid, and derivatives
Paper product dispenser
Mechanism for debugging a computer process