Resources Contact Us Home
Method of forming a silicon layer and method of manufacturing a display substrate by using the same

Image Number 3 for United States Patent #7696091.

A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF.sub.4) gas, a nitrogen trifluoride (NF.sub.3) gas, SiF.sub.4--H.sub.2 gas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF.sub.4), hydrogen (H.sub.2) and argon (Ar).

  Recently Added Patents
Node and wireless sensor network comprising the node
Laboratory spatula
Motor control system, motor control device, and brushless motor
Phosphonate compounds
Coordinated garbage collection for raid array of solid state disks
Switchgear and method for operating switchgear
Determining phase-specific parameters of a physiological variable
  Randomly Featured Patents
Modular power outlet strip
Air separation
Fraud analyst smart cookie
Rope clamping device
Method of applying corrosion inhibitor to parts mounted circuit board
Oversampling digital receiver for radio-frequency signals
Self assembled organic nanocrystal superlattices
Carton with improved opening structure
Thin client graphical presentation and manipulation application
Key ring