Resources Contact Us Home
Method of forming a silicon layer and method of manufacturing a display substrate by using the same

Image Number 3 for United States Patent #7696091.

A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF.sub.4) gas, a nitrogen trifluoride (NF.sub.3) gas, SiF.sub.4--H.sub.2 gas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF.sub.4), hydrogen (H.sub.2) and argon (Ar).

  Recently Added Patents
Water slide
Morphinan compounds
Adding value to a rendered document
Control system for an internal combustion engine
Device and implantation system for electrical stimulation of biological systems
Method for olympic event hospitality program management
Electrophotographic photoreceptor and image forming apparatus including the same
  Randomly Featured Patents
Method for controlling error of internet fax data
Optical switch structure
Image forming apparatus having tension-providing mechanism for belt
Image formation apparatus and printed item
Method of inhibiting the expression of inflammatory cytokines and chemokines
Care engine
Car body welding assembly system
Electronic chess clock
Segmental retaining wall system
Diversity GMSK-receiver with interference cancellation and methods therein