Resources Contact Us Home
Methods of base formation in a BiCOMS process

Image Number 14 for United States Patent #7696034.

Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.

  Recently Added Patents
Network based JIT on a priori knowledge of a set of disparate clients
Non-aqueous solution process for the preparation of cross-linked polymers
Reflective mask blank and method of manufacturing a reflective mask
Secure service for enabling communication for calling party when communication service for called party is suspended
Advanced CAPTCHA using images in sequence
Electronic device with embedded antenna
Pre-fetching map data using variable map tile radius
  Randomly Featured Patents
Folding table and seating apparatus
Method and device for treatment of a material web, in particular a fabric web
Lens-fitted photographic film unit
Modular method and device for the evaluation of the ability of biocide to penetrate biofilm
Magnetic head and process for producing same
Method of producing a biologically high quality natural food concentrate, the product obtained and its use
Patient ambulation motion detector
Cover for a box containing a fluid
Method of preparing a solution for making electroconductive tin oxide films
Method and device for measuring the repeatable and non-repeatable runout of rotating components of a spindle motor