Resources Contact Us Home
Methods of base formation in a BiCOMS process

Image Number 14 for United States Patent #7696034.

Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.

  Recently Added Patents
Rotating adapter assembly
System with controller and memory
Integrated circuit pulse generators
Non-aqueous electrolyte secondary battery, electrode used for secondary battery, and method of manufacturing electrode
Ring-tone messaging service
Pyrolytic process and apparatus for producing enhanced amounts of aromatic compounds
Apparatus for and method of processing glass optical fiber, method of manufacturing and method of drawing optical fiber
  Randomly Featured Patents
Method and system for maintaining a desired distance between a dispenser and a surface
Error detecting apparatus for a scale having a digital display
Distributed terminal optical transmission system
High capacity gravity feed filter for filtering blood and blood products
Network based system which provides a database of simulation solutions
Gel/air freshener system
Process for promoting analgesia
Photovoltaic module kit including connector assembly for non-penetrating array installation
Method of increasing feed efficiency in swine
Low pressure metal or metal halide lamps for photocopying applications