Resources Contact Us Home
Methods of base formation in a BiCOMS process

Image Number 14 for United States Patent #7696034.

Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.

  Recently Added Patents
Image forming apparatus with an improved density adjustment unit
Creation and use of test cases for automated testing of media-based applications
System and method for conditionally sending a request for data to a home node
Food-grade flour from dry fractionated corn germ and collet composition and method for producing same
Biosensor kit
High dynamic range pixel structure
Blended block copolymer composition
  Randomly Featured Patents
Plasma method and apparatus for the production of compounds from gas mixtures, particularly useful for the production of nitric oxides from atmospheric air
Expandable intervertebral cage and surgical method
Removable vehicle seat cowl
Side and heel lasting machine
Sorbent material and a respirator containing the sorbent material
Surgical pin tip
Image search device
Variable latency cut through bridge having variable latency threshold point being configured dynamically for forwarding packets while the bridge is operating
Artificial reef elements and method of deploying same
Inflatable ear device