Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Methods of base formation in a BiCOMS process










Image Number 14 for United States Patent #7696034.

Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.








 
 
  Recently Added Patents
Molecular sieve
Method and apparatus for rebuilding data in a dispersed data storage network
Techniques for performing translation of messages
Oil extractor and the preparation method thereof
Buck converter having reduced ripple under a light load
Image heating device
Rules-based approach to transferring and/or viewing medical images
  Randomly Featured Patents
Electrophoresis media comprising active methylene groups
Implantable electrode lead
IC tap/scan test port access with tap lock circuitry
Arrangements for forming automobile cowl structures
Belt drive system assembly and tension apparatus
Preparation of nanocrystallites
Device and method for estimating the inputtable/outputtable power of a secondary battery
Bottle
Smart card framework
Bets regarding ranges of times at intermediate points in a race