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High voltage GaN transistors










Image Number 6 for United States Patent #7692263.

A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first field plate on the first spacer layer is connected to the gate. A second field plate on the second spacer layer is connected to the gate. A third spacer layer is on the first spacer layer, the second spacer layer, the first field plate, the gate, and the second field plate, with a third field plate on the third spacer layer and connected to the source. The transistor exhibits a blocking voltage of at least 600 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 5.0 m.OMEGA.-cm.sup.2, of at least 600 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 5.3 m.OMEGA.-cm.sup.2, of at least 900 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 6.6 m.OMEGA.-cm.sup.2, or a blocking voltage of at least 900 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 7.0 m.OMEGA.-cm.sup.2.








 
 
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