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Bipolar device having improved capacitance










Image Number 2 for United States Patent #7666750.

The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector by at least about 0.9 microns. The invention also provides a method for forming this device.








 
 
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