Resources Contact Us Home
Semiconductor device and a method of manufacturing the same

Image Number 4 for United States Patent #7651917.

In the present invention, an npn junction is formed by circularly forming a p- type impurity region and n+ type impurity regions on a same single-crystalline substrate as a MOS transistor. Multiple npn junctions are formed apart from each other in concentric circular patterns. With this configuration, steep breakdown characteristics can be obtained, which results in good constant-voltage diode characteristics. Being formed in a manufacturing process of a MOS transistor, the present protection diode contributes to process streamlining and cost reduction. By selecting the number of npn junctions according to breakdown voltage, control of the breakdown voltage can be facilitated.

  Recently Added Patents
High conductive water-based silver ink
Device and method for adjusting a chrominance signal based on an edge strength
Systems and methods for managing and utilizing excess corn residue
Cake knife handle
System and method for determining a characterisitic of an object adjacent to a route
Drugs for prophylaxis or mitigation of taxane-induced neurotoxicity
Data encoding and decoding apparatus and method thereof for verifying data integrity
  Randomly Featured Patents
Subtilase enzymes
Process for preparation of abrasive precipitated silica
Methods and apparatus providing computer and network security utilizing probabilistic policy reposturing
Input-output device testing including embedded tests
Flashlight switching structure
Suture anchor inserter assembly and method
Power system for electrically powered land vehicle
Non-contact type transmission device and rotary magnetic head unit having the non-contact type transmission device
Hetercyclic compounds, processes for their preparation and pharmaceutical compositions containing them
Controlling color temperature of lighting fixture