Resources Contact Us Home
Semiconductor device and a method of manufacturing the same

Image Number 13 for United States Patent #7651917.

In the present invention, an npn junction is formed by circularly forming a p- type impurity region and n+ type impurity regions on a same single-crystalline substrate as a MOS transistor. Multiple npn junctions are formed apart from each other in concentric circular patterns. With this configuration, steep breakdown characteristics can be obtained, which results in good constant-voltage diode characteristics. Being formed in a manufacturing process of a MOS transistor, the present protection diode contributes to process streamlining and cost reduction. By selecting the number of npn junctions according to breakdown voltage, control of the breakdown voltage can be facilitated.

  Recently Added Patents
Systems and methods for excluding undesirable network transactions
Chemically resistant membranes, coatings and films and methods for their preparation
Interactivity model for shared feedback on mobile devices
Direct chemical vapor deposition of graphene on dielectric surfaces
Fusion of road geometry model information gathered from disparate sources
Automated top-down multi-abstraction infrastructure performance analytics -network infrastructure-as-a-service perspective
Solar cell with hyperpolarizable absorber
  Randomly Featured Patents
Combined lotto slip marking aid and advertisement display
Saddle for a bicycle
Fungicidal agent combinations
Flashlight or similar article
System and method for notification subscription filtering based on user role
Telecommunication management system
Sprinkler body
Coating thickness gauge by X-ray fluorescence
Apparatus for orienting and dispensing articles
Method of making travelling wave semi-conductor laser