Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device and a method of manufacturing the same










Image Number 10 for United States Patent #7651917.

In the present invention, an npn junction is formed by circularly forming a p- type impurity region and n+ type impurity regions on a same single-crystalline substrate as a MOS transistor. Multiple npn junctions are formed apart from each other in concentric circular patterns. With this configuration, steep breakdown characteristics can be obtained, which results in good constant-voltage diode characteristics. Being formed in a manufacturing process of a MOS transistor, the present protection diode contributes to process streamlining and cost reduction. By selecting the number of npn junctions according to breakdown voltage, control of the breakdown voltage can be facilitated.








 
 
  Recently Added Patents
Micromachined devices and fabricating the same
Power semiconductor module
Enhanced telephony services
Image forming apparatus, control method and computer-readable medium for stopping a print job during printing by a printer
Antibody recognizing turn structure in amyloid .beta.
Jet pump and reactor
Estimating travel time
  Randomly Featured Patents
Permanent magnet ring separator
Optical card, a card holder and an apparatus for recording, reproducing and erasing information on and from the optical card
Conductivity probe with toroid keeper
Pond skimmer
Adhesive system for particleboard manufacture
Routing assistance system
Device for igniting fuel
Catheter apparatus and method for creating a vascular bypass in-vivo
Electric facial pore cleaner
Surface configuration of an exhaust pipe for a vehicle