Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 4 for United States Patent #7619299.

In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. In the substrate and the epitaxial layer, an N type buried diffusion layer is formed on a P type buried diffusion layer. With this structure, an upward expansion of the P type buried diffusion layer is checked and a thickness of the epitaxial layer can be made small while maintaining the breakdown voltage characteristics of a power semiconductor element. Accordingly, a device size of a control semiconductor element can be reduced.

  Recently Added Patents
Method, apparatus and article for detection of transponder tagged objects, for example during surgery
Point-in-time copies in a cascade using maps and fdisks
Regenerative braking control to mitigate powertrain oscillation
Method and system for determining an optimal missile intercept approach direction for correct remote sensor-to-seeker handover
Secure mobile ad hoc network
Apparatus and methods for inventory, sale, and delivery of digitally transferable goods
  Randomly Featured Patents
Hydroponic culture method for animal food and device for carrying out said method
Ringing control circuitry with shared ringing loop current detector
Apparatus for dispensing bulk goods
Sitting toy with water jets
Medical tubing connector assembly incorporating strain relief sleeve
Electronic device with push button
Wireless communication system, mobile station and handover control method
Photocopying machine
Hydropneumatic spring suspension device
Method of and apparatus for treating granular material