Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 11 for United States Patent #7619299.

In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. In the substrate and the epitaxial layer, an N type buried diffusion layer is formed on a P type buried diffusion layer. With this structure, an upward expansion of the P type buried diffusion layer is checked and a thickness of the epitaxial layer can be made small while maintaining the breakdown voltage characteristics of a power semiconductor element. Accordingly, a device size of a control semiconductor element can be reduced.

  Recently Added Patents
Method, system and computer program product for verifying floating point divide operation results
Question and answer system wherein experts are associated with models and have response rates that are associated with time intervals
Laser protection polymeric materials
Decontamination apparatus and method
Wall flow type exhaust gas purification filter
Downlink scheduling in fractional frequency reuse (FFR) systems
Liquid crystal display and method of driving the same
  Randomly Featured Patents
Image still area determination device
Surgical retractors
Process for preparation of impact resistance and high gloss thermoplastic resin
Rotatable target for a bag toss game
Monitoring system for checking electric rotary machine for local overheating
Digital video pulse width and position modulator
Method and apparatus for filling containers with gas mixtures
Method for producing .alpha.-alumina particulate
Multiple switch circuit with limited switch frequency
Imaging device with prism scan element means