Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of and system for forming SiC crystals having spatially uniform doping impurities










Image Number 4 for United States Patent #7608524.

In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.








 
 
  Recently Added Patents
Method and apparatus for transmitting and receiving extension information of component carrier in wireless communication system
Printer
Semiconductor process
Methods and apparatus for intelligent selection of goods and services in mobile commerce
Encoder that optically detects positional information of a moving body from different optical paths lengths
Signal processing device, signal processing method and program
Restarting event and alert analysis after a shutdown in a distributed processing system
  Randomly Featured Patents
Silicon wafer cleaning fluid with HN0.sub.3, HF, HCl, surfactant, and water
Information processing apparatus for performing processing dependent on presence/absence of user, and method therefor
Electromagnetic heating device
Hoist for installing cabinets, ceiling frames and the like
Method and apparatus for combining integrated and offline metrology for process control
Food product
Structural elements
Phospholipid derivatives
Safety steering wheel for motor vehicles
Feed-forward/feedback system and method for non-causal channel equalization