Resources Contact Us Home
Memory having cap structure for magnetoresistive junction and method for structuring the same

Image Number 5 for United States Patent #7602032.

A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a magnetoresistive junction (MTJ/MCJ) layered structure and a hardmask layer formed over said etch stop layer, wherein said etch stop layer is selected from a material such that an etch chemistry used for removing said hardmask layer has selectivity against etching said etch stop layer material. In a method of opening the hardmask layer, an etch process to remove exposed portions of the hardmask layer is implemented, where the etch process terminates on the etch stop layer.

  Recently Added Patents
Method and apparatus for efficiently inserting fills in an integrated circuit layout
Method for reserving network bandwidth for versioned network services
Instantaneous single click perpetual date mechanism
Locking flange
High-accuracy centered fractional fourier transform matrix for optical imaging and other applications
Document layout method
Scaleable status tracking of multiple assist hardware threads
  Randomly Featured Patents
Thin film transistor device and method of manufacturing the same, and liquid crystal display device
Method and apparatus for coring rock
Quadrature correlation phase determining apparatus
Truck bed liner
Convertible leaf blower and vacuum
Method and apparatus for test generation from hybrid diagrams with combined data flow and statechart notation
Antibodies to .alpha.v.beta.3 integrin
Two speed transmission and belt drive system
Intrusion detector and method