Resources Contact Us Home
Memory having cap structure for magnetoresistive junction and method for structuring the same

Image Number 5 for United States Patent #7602032.

A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a magnetoresistive junction (MTJ/MCJ) layered structure and a hardmask layer formed over said etch stop layer, wherein said etch stop layer is selected from a material such that an etch chemistry used for removing said hardmask layer has selectivity against etching said etch stop layer material. In a method of opening the hardmask layer, an etch process to remove exposed portions of the hardmask layer is implemented, where the etch process terminates on the etch stop layer.

  Recently Added Patents
Television receiver
Semiconductor device and method of manufacturing the same
Flood protection apparatus and container data center including the same
Microfluidic cartridge and method of using same
Viewing stand
Wrench head
Authentication service
  Randomly Featured Patents
Full-speed microprocessor testing employing boundary scan
Fascia including means for rigidly securing a membrane in place
Method and apparatus for forward link gain control in a power controlled repeater
Frequency synthesizer tuning system for television receivers
Magnetic clip
Antimicrobial polymer, contact lens and contact lens-care articles
Sulfonate compound process for producing the same, and bleach composition comprising the same
Air freshner dispenser
System and method for controlling an active magnetic bearing using continuous variable compensation
Gemstones and methods for controlling the appearance thereof