Resources Contact Us Home
Semiconductor device with multi-trench separation region and method for producing the same

Image Number 18 for United States Patent #7582946.

A semiconductor device is configured that a high-withstand voltage semiconductor device (101) and logic circuits (201 and 301) are integrated on a single chip and that a high-withstand voltage high-potential island (402) including the high-potential-side logic circuit (301) is separated using multiple partition walls enclosing therearound. The semiconductor device is provided with a multi-trench separation region (405) having a level shift wire region (404) that is used to connect the high-potential-side logic circuit to the high-potential-side electrode of the high-withstand voltage semiconductor device.

  Recently Added Patents
Container pack
Apparatus and method for phase synchronization in radio frequency transmitters
Gas flow indicator
Systems and methods for providing a video playlist
Mobile terminal
Case for a tablet computer
Support for a portable electronic device
  Randomly Featured Patents
Stepper motor drive system
Continuously variable transmission system
Mechanism for mapping Java objects onto an LDAP repository
Video system with a control device for displaying a menu listing viewing preferences having a high probability of acceptance by a viewer that include weighted premium content
Developing apparatus having mixing region
Austenitic stainless steel
Method and apparatus for electrically heating a fluid
Method of controlling electric vehicle driven by an internal combustion engine
Monolithic multi-color light emission/detection device
Method of deashing from polymer solutions