Resources Contact Us Home
Semiconductor device with multi-trench separation region and method for producing the same

Image Number 11 for United States Patent #7582946.

A semiconductor device is configured that a high-withstand voltage semiconductor device (101) and logic circuits (201 and 301) are integrated on a single chip and that a high-withstand voltage high-potential island (402) including the high-potential-side logic circuit (301) is separated using multiple partition walls enclosing therearound. The semiconductor device is provided with a multi-trench separation region (405) having a level shift wire region (404) that is used to connect the high-potential-side logic circuit to the high-potential-side electrode of the high-withstand voltage semiconductor device.

  Recently Added Patents
Pre-sealing unit for wire-cut electric discharge machine
Maize variety X00C175
Pressure-sensitive adhesive composition for optical films, pressure-sensitive adhesive optical film and image display
Method and system for associating a cell-sector with time-dependent location parameters
Linear jet ionizer
Registry key federation systems and methods
System and method for the heterologous expression of polyketide synthase gene clusters
  Randomly Featured Patents
Outlet add-on module
Multi-panel user interface
Back light unit having a plurality of luminous elements and control method thereof
Noise blanker and a radio receiver and method employing same
Field effect transistor and method of fabrication
Minimizing paper waste carousel-style dispenser apparatus, sensor, method and system with proximity sensor
Method for forming a planar and vertical semiconductor structure having a strained semiconductor layer
Method for operating an internal combustion engine, and motor vehicle
Fence post mounted sign