Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Field effect transistor having a stressed dielectric layer based on an enhanced device topography










Image Number 8 for United States Patent #7563731.

By increasing the transistor topography after forming a first layer of highly stressed dielectric material, additional stressed material may be added, thereby efficiently increasing the entire layer thickness of the stressed dielectric material. The corresponding increase of device topography may be accomplished on the basis of respective placeholder structures or dummy gates, wherein well-established gate patterning processes may be used or wherein nano-imprint techniques may be employed. Hence, in some illustrative embodiments, a significant increase of strain may be obtained on the basis of well-established process techniques.








 
 
  Recently Added Patents
Matching engine for comparing data feeds with user profile criteria
Switching element for a valve train of an internal combustion engine
Method of forming a power supply controller and structure therefor
Cylindrical lithium secondary battery comprising a contoured center pin
Phospholipid-based powders for drug delivery
High performance adaptive switched LED driver
Optoelectronic devices and a method for producing the same
  Randomly Featured Patents
Systems, apparatus and methods for establishing a flat fee brokerage account system
Method for detection of idiopathic interstitial pneumonia
Nitride based semiconductor device and method for manufacturing of the same
Method of producing manganese cordiertie glass-ceramics
Hybrid drive for vehicles and the like
CDK-inhibitory pyrimidines, their production and use as pharmaceutical agents
Fluid actuated valve
Injection system for a diesel engine with a high pressure injection pump for each cylinder
Field distribution measuring method and device
Microstructure liner having improved adhesion