Resources Contact Us Home
Field effect transistor having a stressed dielectric layer based on an enhanced device topography

Image Number 8 for United States Patent #7563731.

By increasing the transistor topography after forming a first layer of highly stressed dielectric material, additional stressed material may be added, thereby efficiently increasing the entire layer thickness of the stressed dielectric material. The corresponding increase of device topography may be accomplished on the basis of respective placeholder structures or dummy gates, wherein well-established gate patterning processes may be used or wherein nano-imprint techniques may be employed. Hence, in some illustrative embodiments, a significant increase of strain may be obtained on the basis of well-established process techniques.

  Recently Added Patents
Template fixed .beta.-hairpin loop mimetics and their use in phage display
Display device and electronic apparatus including the same
Methods for using MRI-compatible patches
Implantable medical device coatings with biodegradable elastomer and releasable taxane agent
Print media bottom portion printing
Identification and isolation of multipotential neural progenitor cells from the subcortical white matter of the adult human brain
Cooling system for server and cooling method for electronic apparatus
  Randomly Featured Patents
Dual string coil tubing injector assembly
Humanized immunoglobulin reactive with b7-2 and methods of treatment therewith
Face image photographing apparatus and face image photographing method
Test device for flat electronic assemblies
Methods for treating disorders associated with the central nervous system using opticallly pure (+) cisapride
Enhanced bone cells growth and proliferation on TiO2 nanotubular substrates treated by radio-frequency plasma discharge
Windshield wiper sharpening device
Access and control system for network-enabled devices
Method of forming agglutinates in blood samples
System and method for degassing a material and a material distributor for use when degassing a material