Resources Contact Us Home
Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same

Image Number 10 for United States Patent #7557050.

In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

  Recently Added Patents
Camera with monitor
System, device and method for transrating file based assets
Circuit breakers
Method and apparatus of motion vector prediction with extended motion vector predictor
System and method for agitation of multiple specimen containers
Digital broadcast receiver and method for processing caption thereof
  Randomly Featured Patents
RFID interrogator/induction heating system
Regular pattern arrays for memory and logic on a semiconductor substrate
Efficiency of electronic message communications between mobile communication devices
Presettable speedometer for automotive vehicle
Disposable diaper with spaced elastic leg openings for improved appearance
Method for determining a position point of a movable element
Rotary positioning apparatus
Method for producing a multilayered part
Nuclear fuel assembly
Circuit board connector extension