Resources Contact Us Home
Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same

Image Number 10 for United States Patent #7557050.

In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

  Recently Added Patents
Cosmetic composition based on a supramolecular polymer and a hyperbranched functional polymer
Early kill removal graphics processing system and method
Nonvolatile semiconductor memory device and method of manufacturing the same
System and method for self service marketing research
Solar cell with hyperpolarizable absorber
Cationic polymers for antimicrobial applications and delivery of bioactive materials
Scattering spectroscopy employing hotspot-aligned nanopores
  Randomly Featured Patents
Means and method of sensing temperature
Process for producing a vinyl chloride polymer or copolymer in aqueous suspension using a hydrotalcite compound as suspension stabilizer
Drawing horse and drafting table
Portable handheld terminal housing
Tool hanger
Method and apparatus for inspecting pipelines from an in-line inspection vehicle using magnetostrictive probes
Binoculars and camera with binoculars
Ink jet print head and method of production thereof
Sheet of paper toweling
Standby power supply with load-current harmonics neutralizer