Resources Contact Us Home
Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same

Image Number 10 for United States Patent #7557050.

In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

  Recently Added Patents
Electronic flash device
High electron mobility transistor and manufacturing method thereof
Femtocell one-to-many packet delivery
Method and composition for attracting arthropods by volatizing an acid
Dye-sensitized solar cell, dye-sensitized solar cell module, and coating liquid for forming electrolyte layer
Servomotor control circuit
Plants and seeds of corn variety CV778791
  Randomly Featured Patents
Scheme for avoiding deadlock in multi-ring interconnect, with additional application to congestion control
Color demonstrator
Controlling apparatus for paper-feeding drive operated by driving system of optics unit for exposure
Optical pickup device and recording/reproducing device
Sheet material having weakness zones and a system for dispensing the material
Solar still
Method and system for relative tracking
Stable backpack
Method and apparatus for producing atomized metal powder
Shelf unit for use in rack for communication equipment