Resources Contact Us Home
Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same

Image Number 10 for United States Patent #7557050.

In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

  Recently Added Patents
Server providing pseudo print preview and final regular preview to device
Controlling transmission resources in mobile radio systems with dualtransfer mode
Music composition automation including song structure
High density molecular memory storage with read and write capabilities
Method and system for delivering and executing virtual container on logical partition of target computing device
Navigation apparatus, search result display method, and graphical user interface
Tap and linking module TDO register, gating for TCK and TMS
  Randomly Featured Patents
Measuring instrument
Air conditioner with auxillary condenser defrost
Mass casualty, disaster training inflatable manikin
Two-stage pressure regulator
Method of making a ski by reversible thermoplastic assembly
Signal level shift circuit and method for dual resistor ladder digital-to-analog converters
Method of HF vapor release of microstructures
Article dispensing assembly
Grinding head assembly
Portable apparatus for brewing hot beverages