Resources Contact Us Home
Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same

Image Number 10 for United States Patent #7557050.

In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

  Recently Added Patents
Transparent zebrafish and preparation method thereof
Accordion bioreactor
System and method for combining different tablets into a pouch
Pointing device, display apparatus and pointing system, and location data generation method and display method using the same
2,4-disubstituted pyrimidines useful as kinase inhibitors
Compositions of PD-1 antagonists and methods of use
  Randomly Featured Patents
Method and compositions for generating nitrogen gas
Fuel control and feed system for gas fueled engine
Porous nozzle projectile barrel
Tool replacement system
Spatial light modulator using electron trapping materials
Estimating bit error probability (BEP) in an edge wireless system
Chuck for capping machine
Valve timing control system and method of producing valve timing control system
Power reduction design for ECL outputs that is independent of random termination voltage
Ignition timing control system for internal combustion engine