Resources Contact Us Home
Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same

Image Number 10 for United States Patent #7557050.

In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

  Recently Added Patents
Idle stop and go system and method for controlling thereof
Advertising system and method
Method and CTDevice for computer tomographic spiral scanning of a patient
Implementing state-of-the-art gate transistor, sidewall profile/angle control by tuning gate etch process recipe parameters
Methods, systems, and products for providing communications services
Reception method and reception apparatus
Systems and methods for facilitating communication with foundation fieldbus linking devices
  Randomly Featured Patents
Dentifrice-compatible silica particulates
Method of forming a contact in a pixel cell
Modular clockspring
Nitride semiconductor laser chip and method of fabrication thereof
Mixed source media playback
Channel scan logic
Method of and apparatus for communicating information signals
Apparatus for measuring viscosities and density of fluids
Technique for localized thermal treatment of mammals
Cube-like processor array architecture