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Method for fabricating thin layer device

Image Number 2 for United States Patent #7544964.

A method for producing a thin layer device such as a superconductive device excellent in mechanical strength and useful as a submillimeter band receiver is provided. The thin layer device is produced by forming a multilayer structure substance comprising an NbN/MgO/NbN-SIS junction on an MgO temporary substrate, then forming SiO.sub.2, as a substrate, on said multilayer structure substance, and subsequently removing the MgO temporary substrate by etching. A superconductive device (a thin layer device) produced by a method of the present invention has excellent performance and high mechanical strength, and therefore introduction to a waveguide for a submillimeter band is also easy.

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