Resources Contact Us Home
Method for fabricating thin layer device

Image Number 2 for United States Patent #7544964.

A method for producing a thin layer device such as a superconductive device excellent in mechanical strength and useful as a submillimeter band receiver is provided. The thin layer device is produced by forming a multilayer structure substance comprising an NbN/MgO/NbN-SIS junction on an MgO temporary substrate, then forming SiO.sub.2, as a substrate, on said multilayer structure substance, and subsequently removing the MgO temporary substrate by etching. A superconductive device (a thin layer device) produced by a method of the present invention has excellent performance and high mechanical strength, and therefore introduction to a waveguide for a submillimeter band is also easy.

  Recently Added Patents
Apparatus and method for image reconstruction and CT system
Methods for integrating the production of cellulose nanofibrils with the production of cellulose nanocrystals
Intelligent and automated code deployment
Method for producing carrier on which microorganisms capable of conducting multiple parallel mineralization are immobilized, column reactor and solid medium for cultivating plants
Method for computing an energy efficient route
Mono-body defibrillation probe
  Randomly Featured Patents
Rail anchoring spike
FFT accelerated iterative MIMO equalizer receiver architecture
Fuel management system for variable ethanol octane enhancement of gasoline engines
Combination of telescopically extendable frame with a laundry bag assembly
Optical disk having divided write strategy tuning areas, optical recording/reproducing apparatus and method using the same
Pelletized mint mulch and method of making
Quick lace tightener for shoes
Method and apparatus for v-bank filter bed scanning
Asynchronously generated menus
Integrated resonant circuit with temperature compensated quality factor