Resources Contact Us Home
Method for fabricating thin layer device

Image Number 2 for United States Patent #7544964.

A method for producing a thin layer device such as a superconductive device excellent in mechanical strength and useful as a submillimeter band receiver is provided. The thin layer device is produced by forming a multilayer structure substance comprising an NbN/MgO/NbN-SIS junction on an MgO temporary substrate, then forming SiO.sub.2, as a substrate, on said multilayer structure substance, and subsequently removing the MgO temporary substrate by etching. A superconductive device (a thin layer device) produced by a method of the present invention has excellent performance and high mechanical strength, and therefore introduction to a waveguide for a submillimeter band is also easy.

  Recently Added Patents
Synchronization of video input data streams and video output data streams
Broadcasting method and radio apparatus
Pseudosynchronizer for an unsynchronized bistatic radar system
Method and system for implementing ID/locator mapping
Surround sound virtualization apparatus and method
Strawberry plant named `Mayflower`
Light sensing circuit having a controlled light sensing period or a controlled current output period according to ambient temperature, method of controlling the same, and touch panel comprisin
  Randomly Featured Patents
Nonvolatile semiconductor memory
Sheet metal working electrode and handpiece
Driving current control circuit
Image-forming apparatus having at least one of additives in the non-magnetic single-component toner exhibiting electrical conductivity
Method for sterilizing liquids by brief heating
Device for extinguishing the flame of a candle
Knee bolster structure
Mounting apparatus of side airbag for vehicle