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Semiconductor device having a low concentration layer formed outside a drift layer










Image Number 7 for United States Patent #7535056.

A semiconductor device includes a substrate, a first electrode and a second electrode formed on the substrate, and a drift layer which is formed between the first electrode and the second electrode, and becomes conduction in an ON state, and becomes depletion in an OFF state, a low concentration layer which is formed outside of the drift layer, and is opposite in polarity to that of the drift layer.








 
 
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