Resources Contact Us Home
Semiconductor device having a low concentration layer formed outside a drift layer

Image Number 7 for United States Patent #7535056.

A semiconductor device includes a substrate, a first electrode and a second electrode formed on the substrate, and a drift layer which is formed between the first electrode and the second electrode, and becomes conduction in an ON state, and becomes depletion in an OFF state, a low concentration layer which is formed outside of the drift layer, and is opposite in polarity to that of the drift layer.

  Recently Added Patents
System for seeking for an optimal configuration of a bi-, tri- or multi-ventricular cardiac resynchronization implanted device
Nanocatalysts structure, process for the preparation and use thereof
System and method for passing PLC signals from a first electrical line to a second electrical line
Remotely provisioned wireless proxy
System and method for measuring an analyte in a sample
Fabrication of high gradient insulators by stack compression
Distributed mobile access point acquisition
  Randomly Featured Patents
Collection device for grass and sprigs
Two-part epoxy composition
Poly-silicon layer of a thin film transistor and display device having the same
Benzamide derivatives and herbicidal composition containing the same
Microbiological process for production of fatty acids having high degree of unsaturation with echinosporangium
Water closet tank
Hydrometallurgical process for the recovery of precious metal values from precious metal ores with thiosulfate lixiviant
Fuel cell system
Apparatus and method for measuring and of controlling the gap between polymer sheet cooling rolls
Polymer film coated with aqueous polymer