Resources Contact Us Home
Manufacture of semiconductor device having nitridized insulating film

Image Number 3 for United States Patent #7514376.

A method for manufacturing a semiconductor device is disclosed which enables to suppress decrease in the mobility in a channel region by suppressing piercing of boron through a gate insulation film which boron is ion-implanted into a gate electrode. The method for manufacturing a semiconductor device includes: a step for forming a gate insulating layer on an active region of a semiconductor substrate; a step for introducing nitrogen through the front surface of the gate insulating layer using active nitrogen; and a step for conducting an annealing treatment in an NO gas atmosphere so that the nitrogen concentration distribution in the nitrogen-introduced gate insulating layer is high on the front surface side and low on the side of the interface with the semiconductor substrate.

  Recently Added Patents
Catalysts for hydrodeoxygenation of polyols
Storage system comprising multiple microprocessors and method for sharing processing in this storage system
Display device substrate, method for manufacturing the same, display device, method for forming multi-layer wiring, and multi-layer wiring substrate
Inhibitors of bacterial tyrosine kinase and uses thereof
Incrementally increasing deployment of gateways
Image-processing method and program, and image-processing apparatus
Spreading technique applied to broadband mobile communications by satelite relying on DVB-RCS
  Randomly Featured Patents
Device for the exact centering of an NMR sample tube
Method and apparatus for varying the rate at which broadcast beacons are transmitted
Method for making electrical connections to an element on printed circuit board
Internal combustion engine
Wear-resisting sintered alloy
Modification of resist and/or resist processing with fluorescence detection
Method of molding
Vitamin tablet
Image forming apparatus and control method therof
Personal stereo cassette player