Resources Contact Us Home
Transistor and method of manufacturing the same

Image Number 18 for United States Patent #7510918.

In a transistor and a method of manufacturing the transistor, the transistor includes a dummy structure enclosing source/drain structures and channel structures. Thus, a gate electrode of the transistor may be efficiently formed over the channel structures. In addition, the source/drain structure may not grow exceedingly in an epitaxial growth process employed for forming the source/drain structure.

  Recently Added Patents
Method for configuring analog-to-digital converter keys and non-transitory machine readable medium storing program code executed for performing such method
Using interrupted through-silicon-vias in integrated circuits adapted for stacking
Information processing apparatus and update information obtainment method
Method for operation of multi-layer-multi-turn high efficiency inductors
Tie down strap hook
Storage device, data processing device, registration method, and recording medium
Image generation based on a plurality of overlapped swathes
  Randomly Featured Patents
Liquid crystal display module having electrode pairs in partitioned light emitting spaces, respectively
Thin film magnetic head with enhanced gap area enhanced by surrounding materials of hard and electrically conductive material
Microwave oven
Hydraulic mineral composition, production method thereof and hydraulic binders and cementitious products containing one such composition
Electrical connector system
Multi-color overlay system for processing and displaying electrocardiac signals
Thiadiazole modulators of PKB
Corrosion resistant amorphous metals and methods of forming corrosion resistant amorphous metals
Motorcycle with accessory
Measuring apparatus for grinding machines for cylinders with structural and surface checking devices