Resources Contact Us Home
Double pinned photodiode for CMOS APS and method of formation

Image Number 6 for United States Patent #7495273.

A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first conductivity type, wherein the base layer of a first conductivity type is the substrate base or is a doped layer over the substrate base. At least one doped region of a second conductivity type is below the surface of said first layer, and extends to form a first junction with the base layer. A doped surface layer of a first conductivity type is over the at least one region of a second conductivity type and forms a second junction with said at least one region of a second conductivity type.

  Recently Added Patents
PA envelope power supply undershoot compensation
Tint block image generation program, tint block image generation device, and tint block image generation method
Semiconductor device
Ion exchange membranes
Cell phone protector case having the combination of a soft exterior shell and an interior hard shell
Process for the preparation of darunavir
Primitive re-ordering between world-space and screen-space pipelines with buffer limited processing
  Randomly Featured Patents
Means and method for aiding individuals to stop smoking
Self-contained hydraulic lifter
Rotary harrows
SiRNA targeting myeloid differentiation primary response gene (88) (MYD88)
Distributed multi-party conferencing system
1,3,4,6,7,11b-Hexahydro-6-phenyl-2H-pyrazino-(2,1-a)isoquinolines, for anti-histamine or anti-depression treatment
Portion of a shoe sole
Production of 2-amin-2-[2-(2-(40-C2-20-alkyl-phenyl)ethyl]propane-1,3-diols
Hybrid occupant detection system
Motor control circuit for paper shredders