Resources Contact Us Home
Double pinned photodiode for CMOS APS and method of formation

Image Number 6 for United States Patent #7495273.

A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first conductivity type, wherein the base layer of a first conductivity type is the substrate base or is a doped layer over the substrate base. At least one doped region of a second conductivity type is below the surface of said first layer, and extends to form a first junction with the base layer. A doped surface layer of a first conductivity type is over the at least one region of a second conductivity type and forms a second junction with said at least one region of a second conductivity type.

  Recently Added Patents
Pre and post-paid real time billing convergence system
Ink composition, ink for inkjet recording and ink set using the ink
Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
Transmitter having a programmable amplifier operating class
State detection device, electronic apparatus, measurement system and program
Techniques to manage communications resources for a multimedia conference event
Power-on reset circuit
  Randomly Featured Patents
Fast location of address blocks on gray-scale images
Centrally coordinated peer assignment
Rose plant -- Meirotervi variety
Apparatus for automatically adapting the mean sound level of a television receiver
Imaging agents, precursors thereof and methods of manufacture
Check processing method, check processing program medium, and check processing apparatus
Chair arm
Compositions comprising nitrofurantoin and uva ursi
Multi-chip device and method for producing a multi-chip device
Dynamic braking centrifuge