Resources Contact Us Home
Double pinned photodiode for CMOS APS and method of formation

Image Number 10 for United States Patent #7495273.

A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first conductivity type, wherein the base layer of a first conductivity type is the substrate base or is a doped layer over the substrate base. At least one doped region of a second conductivity type is below the surface of said first layer, and extends to form a first junction with the base layer. A doped surface layer of a first conductivity type is over the at least one region of a second conductivity type and forms a second junction with said at least one region of a second conductivity type.

  Recently Added Patents
Storage system, control method therefor, and program
Control service for relational data management
Photovoltaic system with integrated photovoltaic panel and battery
Wireless refrigerant scale platform
Polypeptide microparticles
Disc shaped high density recording medium
Liquid crystal display device
  Randomly Featured Patents
Oxygen generating apparatus
Apparatus and method for automated protein design
Composite non-distortable needlepoint canvas
Apparatus for installing a material which is processed by using chemicals
System and method for client program control of a computer display cursor
MTS test signal generator
Soap making process
Guided flow wind power machine with tubular fans
Shock absorber with leveling function