Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Double pinned photodiode for CMOS APS and method of formation










Image Number 10 for United States Patent #7495273.

A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first conductivity type, wherein the base layer of a first conductivity type is the substrate base or is a doped layer over the substrate base. At least one doped region of a second conductivity type is below the surface of said first layer, and extends to form a first junction with the base layer. A doped surface layer of a first conductivity type is over the at least one region of a second conductivity type and forms a second junction with said at least one region of a second conductivity type.








 
 
  Recently Added Patents
Process and intermediates for preparing lapatinib
Analyte assaying by means of immunochromatography with lateral migration
Data recording apparatus with recording control based on defect block and control method thereof
(4929
Projector
Antimicrobial polysiloxane materials containing metal species
Protein kinase C inhibitors and uses thereof
  Randomly Featured Patents
System and method for automatic detection of end of diastole and end of systole image frames in X-ray ventricular angiography
Seal assembly having an encapsulated cone spring
Passive fire protection system
Sign stand for mounting flexible sign panels
Adjustable cutter
Holder for eyeglasses
Ceramic envelope plug and lead wire and seal
Method for removing sulfur oxides from a hot gas
Digital audio player
Stoppers for injection and infusion bottles coated with plastics having polar molecular groups