Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Double pinned photodiode for CMOS APS and method of formation










Image Number 10 for United States Patent #7495273.

A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first conductivity type, wherein the base layer of a first conductivity type is the substrate base or is a doped layer over the substrate base. At least one doped region of a second conductivity type is below the surface of said first layer, and extends to form a first junction with the base layer. A doped surface layer of a first conductivity type is over the at least one region of a second conductivity type and forms a second junction with said at least one region of a second conductivity type.








 
 
  Recently Added Patents
Method and system for displaying messages in context
Image generating apparatus, program, medium, and method for controlling a tilt angle of a virtual camera
Method for manufacturing fluoropolymers
Alert notification distribution tool
System for providing dynamic group and service assignments
Methods and systems for full-color three-dimensional image display
Method and system for cooperative transmission of a video sequence
  Randomly Featured Patents
Vapor permeable pressurized package
High efficiency continuous separation process
Vehicle grille/front end segment
Method for supplying a uniform strip of bread dough
Cyanohydrin ethers and esters as high-sensitivity enzyme substrates
Vehicle exterior mirror
Pharmaceutical composition
N-[[6-(Lower alkoxy)-5-(trifluoromethylthio)-1-naphthalenyl]thioxomethyl]-N-(lower alkyl)glycines
Rotation detecting apparatus
Switchboard cell for receiving switchgear movable by positioning drive