Resources Contact Us Home
Highly doped III-nitride semiconductors

Image Number 7 for United States Patent #7485901.

A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1.times.10.sup.20 cm.sup.-3 at Al mole fractions up to 65% are obtained.

  Recently Added Patents
Remote device pairing setup
Mounting apparatus for PCI card
Drug delivery system
Push button
Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor
Diazeniumdiolated phosphorylcholine polymers for nitric oxide release
Austenitic stainless steel welding wire and welding structure
  Randomly Featured Patents
Method and system for inserting a probe
Optical mark reader housing
Apparatus for suppressing automobile anti-theft arm/disarm system
Core differential pressure and liquid control line apparatus in a nuclear reactor
GMR high current, wide dynamic range sensor
Apparatus and method for removing toilet odors
Electron-beam apparatus for thermal treatment by electron bombardment
Process and device for application of vat dye, especially indigo, to a thread bundle
Thin film magnetic head and methods for producing same
Ice axe