Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Highly doped III-nitride semiconductors










Image Number 5 for United States Patent #7485901.

A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1.times.10.sup.20 cm.sup.-3 at Al mole fractions up to 65% are obtained.








 
 
  Recently Added Patents
High porosity ceramic honeycomb article containing rare earth oxide and method of manufacturing same
Method and apparatus for triggering expiration of a data tag device
Fixing apparatus
Optical recording medium, and method for producing optical recording medium
Flash drive
Candle holder
Bio-pesticide and method for pest control
  Randomly Featured Patents
Castor locking device for arresting the rotation and the swivelling of the castor
Method for cutting metal reinforced hoses, metal pipes and similar, and a device for utilization of the method
Mobile hand carrier
Remote data mirroring system having a service processor
Multilayer nonwoven composite structure
Folder with signature support and method
Method and element for controlling release of a disinfectant from a substrate
Apparatus and method for the complete characterization of optical devices including loss, birefringence and dispersion effects
Boot rack
Boxcell core and panel