Resources Contact Us Home
Highly doped III-nitride semiconductors

Image Number 5 for United States Patent #7485901.

A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1.times.10.sup.20 cm.sup.-3 at Al mole fractions up to 65% are obtained.

  Recently Added Patents
System and method of improving audio signals for the hearing impaired
Method and laser receiver for acoustically indicating a laser beam
Light powered hearing aid
Targeted gene deletions for polysaccharide slime formers
Multi-radio coexistence
Voltage detection apparatus and combination circuit
Neuronal differentiation-inducing peptide and use thereof
  Randomly Featured Patents
Mandrel having an eddy current probe
Compact self-ballasted fluorescent lamp with improved rising characteristics
Continuous process for producing rubber-modified methyl methacrylate syrups
Passenger restraint system
Soap dispenser
Method and apparatus for dewatering screenings
System and methods for generating manufacturing data objects
Multiple beam gas laser and method
Impeller flow-meter pulsation damping
Cover for sample with homogenous pressure application