Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Highly doped III-nitride semiconductors










Image Number 4 for United States Patent #7485901.

A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1.times.10.sup.20 cm.sup.-3 at Al mole fractions up to 65% are obtained.








 
 
  Recently Added Patents
Ice data collection system
Re-establishing push notification channels via user identifiers
Output circuit
Communication terminal, communication system, server apparatus, and communication connecting method
Reception method and reception apparatus
3D solid-state arrangement for solid state memory
Broadband optical network apparatus and method
  Randomly Featured Patents
Building wall panels and method of making the same
Process for making solid-state color imaging device
Method and system for creating self-aligned twin wells with co-planar surfaces in a semiconductor device
Variable length code decoder for simultaneous decoding the most significant bits and the least significant bits of a variable length code
Piano action
Cabin services system for a mobile platform
Table
Separation of isotopes by cyclical processes
Method and system for generating functional test cases
Steering column with lubricated isolator pad