Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Highly doped III-nitride semiconductors










Image Number 4 for United States Patent #7485901.

A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AlN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1.times.10.sup.20 cm.sup.-3 at Al mole fractions up to 65% are obtained.








 
 
  Recently Added Patents
Semiconductor integrated circuit
System and method for logical separation of a server by using client virtualization
Temporal document trainer and method
Late loading rich media
Method and system for distributing load by redirecting traffic
Solar power system with communication network utilizing magnetic fields
Method for encoding signal, and method for decoding signal
  Randomly Featured Patents
Organic based titanate primers to bond fluoro-containing compound to silicone rubber
Electrically modifiable optical grating devices
Retardation system for air launched flares and submunitions
Printing system, printing method, and recording medium
Treatment of diseased tissue using controlled ultrasonic heating
Backlight assembly and liquid crystal display having the same
Parallel flexible transmission cable
Hose coupling
Foot operated control unit
Disperse dye composition for use in solvent dyeing