Resources Contact Us Home
Pattern forming method and semiconductor device manufactured by using said pattern forming method

Image Number 6 for United States Patent #7482661.

A pattern forming method includes determining an allowable value of an etching conversion difference, obtaining a maximum distance between patterns generating the etching conversion difference within the allowable value, the patterns including main patterns or both main patterns and a dummy pattern, preparing a first design layout in which a first distance between the main patterns is smaller than the maximum distance, or a second design layout in which a second distance between the main patterns and the dummy pattern is smaller than the maximum distance, performing a design data conversion based on the first or second design layout to form first or second design data, and forming the main patterns by using the first design data, or forming both the main patterns and the dummy pattern by using the second design data.

  Recently Added Patents
Hand sign
Pre-distortion architecture for compensating non-linear effects
Communication device and two-dimensional communication system using the same
Benzimidazole inhibition of biofilm formation
Semiconductor device
Method and system for scaling usage of a social based application on an online social network
Cooling method and device for cooling a medium-voltage electrical installation in a protective sheath
  Randomly Featured Patents
Snap-on electrical connector for baseless cartridge bulb with electrical cable piercer
Continuously operating infusion device and method
Mobile communication terminal
High precision delay measurement circuit
Solar concentrator testing
Frequency synthesizer using three subfrequency synthesizers for generating two different frequencies
Method of forming a patterned conductive structure
Capacitive accelerometer
Electronic device and method for fabricating an electronic device