Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Key-hole free process for high aspect ratio gap filling with reentrant spacer










Image Number 2 for United States Patent #7482278.

A new method of depositing PE-oxide or PE-TEOS. An HDP-oxide is provided over a pattern of polysilicon. An etch back is performed to the deposited HDP-oxide, a layer of plasma-enhanced SiN is deposited. This PE-SiN is etched back leaving SiN spacers on the sidewalls of the poly pattern, further leaving a deposition of HDP-oxide on the top surface of the poly pattern. The profile of the holes within the poly pattern in such that the final layer of PE-oxide or PE-TEOS is deposited without resulting in the formation of keyholes in this latter layer.








 
 
  Recently Added Patents
Scanning transmission electron microscope and axial adjustment method thereof
Motor device and method of manufacturing the same
Novelty snacks and method of manufacture of same
Stool
Technique for effectively providing program material in a cable television system
Classifying documents using multiple classifiers
Energy drink package
  Randomly Featured Patents
Self-illuminating oil candle
Methods of alteration of surface affinities using non-chemical force-creating fields
Semiconductor integrated circuit device and microcomputer
System, apparatus, and method for integrating screen printing and embroidery on a garment while mounted in a single hoop
Electronic component assembly
Image processing apparatus and computer program product storing image and print setting information associated with index used to suppress toner consumption
Hybrid vehicle
Transferring information signals from a first to a second recording medium
Error identification in a computer-based network
Device environment configuration systems, device environment configuration methods, and data storage media therefor