Resources Contact Us Home
Method of fabricating a semiconductor device

Image Number 8 for United States Patent #7473592.

A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.

  Recently Added Patents
Collaborative data redundancy for configuration tracking systems
Power converter for an LED assembly and lighting application
Polypeptide microparticles
Phospholipid-based powders for drug delivery
Stabilised prostaglandin composition
Chromene compound
Methods and apparatus for monitoring communication through identification of priority-ranked keywords
  Randomly Featured Patents
Method for improved selectivity in photo-activation and detection of molecular diagnostic agents
Putter head
Transverse frame of industrial building carcass
Roller furling assembly
Loading/unloading device for shelving
Conducting polymer based acid/base sensors
Automotive racing helmet fishing reel
Process for the preparation of a super lightweight foamed sheet
Massaging apparatus for legs
Rotor composite engine