Resources Contact Us Home
Method of cleaning silicon nitride layer

Image Number 3 for United States Patent #7468325.

A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.

  Recently Added Patents
Disposable and tamper-resistant RFID lock
Detecting patterns of abuse in a virtual environment
Lens driving device
Method and CTDevice for computer tomographic spiral scanning of a patient
Disk drive
Phase lock loop with injection pulse control
  Randomly Featured Patents
Method of producing warheads containing explosives
Integrally conductive locking coaxial connector
Method and device for preliminarily bonding laminated glass using curved roll
Substrate storage container
Editing apparatus for simultaneously editing two different types of data with a single edit command
Propylene polymer compositions
Enhancing timeliness of cache prefetching
Labyrinth lubricant seal for belt conveyor roll
Horticulture and floriculture motivating system
Fire extinguisher seal