Resources Contact Us Home
Method of cleaning silicon nitride layer

Image Number 3 for United States Patent #7468325.

A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.

  Recently Added Patents
Compound semiconductor device and manufacturing method therefor
Liquid crystal display apparatus
Liquid crystal display and method of driving the same
Push-up bar
Die packages and systems having the die packages
Error recovery storage along a memory string
User control of replacement television advertisements inserted by a smart television
  Randomly Featured Patents
Vehicle front side grille
Apparatus and method for removing subsea structures
Fueling system vapor recovery and containment performance monitor and method of operation thereof
Module for housing electronic components and method of manufacturing the same
Downstream fluid pressure responsive emergency shutdown valve
Coated metal elements for producing glass
Vibration-damping mount
Guide arch for tubing
Swimming apparatus