Resources Contact Us Home
Method of cleaning silicon nitride layer

Image Number 3 for United States Patent #7468325.

A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.

  Recently Added Patents
Method and system for enabling rendering of electronic media content via a secure ad hoc network configuration utilizing a handheld wireless communication device
Image forming apparatus to automatically select a communication condition
System, method, and software for researching, analyzing and comparing expert witnesses
Substituted phenylsulfur trifluoride and other like fluorinating agents
Pet fish burial pod
Table base
  Randomly Featured Patents
Apparatus for seasoning food
Double balanced mixing
Apparatus and method for transferring target points from one surface to another
Adjustable forehead support dial for respiratory mask
Pre-plasticizing type injection molding machine and control method therefor
Semiconductor chips having redistributed power/ground lines directly connected to power/ground lines of internal circuits and methods of fabricating the same
Mobile radio base station
Cutting insert with chip control
Integrator module with a collimator and a compact light source and projection display having the same
DNA constructs containing fruit-ripening genes