Resources Contact Us Home
Method of cleaning silicon nitride layer

Image Number 3 for United States Patent #7468325.

A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.

  Recently Added Patents
Backlight assembly, method for driving backlight assembly, and liquid crystal display having the same
Method and system for delivering and executing virtual container on logical partition of target computing device
Moulded tie strips
XDSL system and signal transmission method, sending device, and receiving device of xDSL system
Method for assembling a camera module, and camera module
Identifying users of remote sessions
  Randomly Featured Patents
Boom device for presentation appliances
Ceramic body
System and method for general purpose network analysis
Method and apparatus for separating paper fiber and plastics from mixed waste materials and products obtained thereby
Sound muffling apparatus for air operated equipment
Protection device and a method that detect electricity
Polybenzimidazoles via aromatic nucleophilic displacement
Sulfonamide-substituted benzopyran derivatives, processes for their preparation, their use as a medicament, and pharmaceutical preparations comprising them
Expandable orthopedic device
Lock handle assembly for casement windows