Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Bipolar transistor and method for fabricating the same










Image Number 2 for United States Patent #7465969.

A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.








 
 
  Recently Added Patents
Composite high reflectivity layer
Floribunda rose plant named `KORamflusa`
Light barrier and method for detecting objects
Methods for increasing efficacy of FOLR1 cancer therapy
Shower bench
Arrays of optical confinements and uses thereof
Apparatus and method for exerting force on a subject tissue
  Randomly Featured Patents
Transmitting multiple packets in a frame
Metal hydroxide microspheroidal scintigraphic agents and method of preparation
Apparatus and method for thermally processing a substrate with a heated liquid
Method for making a self-locking knot in a stator lacing machine
System for and method of detecting clutch engagement of a manual transmission
Ceramic welding process
Apparatus for sensing and/or measuring changes in inclinations
Telephone call routing
Valve mechanism
Display package