Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Bipolar transistor and method for fabricating the same










Image Number 2 for United States Patent #7465969.

A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.








 
 
  Recently Added Patents
Structural plasticity in spiking neural networks with symmetric dual of an electronic neuron
Media identification system with fingerprint database balanced according to search loads
Asymmetric switching rectifier
Table base
Fabric-backplane enterprise servers with pluggable I/O sub-system
Contact sensor, driver device, and care bed
Interface circuit
  Randomly Featured Patents
Apparatus for advancing and returning feed bars for a transfer press
Footwear upper
Head suspension assembly mounting nonvolatile memory and magnetic disk device
Low jitter analog-digital locker loop with lock detection circuit
External negative electrode having a cambered shape
Air conditioning waste heat/reheat method and apparatus
Flashlight
Voltage controlled oscillator with temperature compensation
Vertical vibration control device
Magnetic random access memory