Resources Contact Us Home
Bipolar transistor and method for fabricating the same

Image Number 2 for United States Patent #7465969.

A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.

  Recently Added Patents
Sub-resolution assist feature repair
Medical imaging probe with rotary encoder
System, method and computer program product for sharing a single instance of a database stored using a tenant of a multi-tenant on-demand database system
System and method for managing investment funds
Image forming device
Level shifter and method of using the same
  Randomly Featured Patents
Systems and methods for synchronizing the internal clocks of a plurality of processor modules
Systems and methods for arc energy regulation and pulse delivery
Wagon for use in a hospital
Laboratory mixer for mixing medical and chemical test samples
Blur function modeling for depth of field rendering
Diffuser for flat panel display
Communication device having antenna switch diversity, and method therefor
Rotation molded body
Tire puncture repair apparatus