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Method of forming a BJT with ESD self protection










Image Number 2 for United States Patent #7422952.

A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating the hot spot away from the collector contact prevents the collector contact from melting during an electrostatic discharge (ESD) pulse.








 
 
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