Resources Contact Us Home
Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

Image Number 7 for United States Patent #7411828.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be "unstuck" or "removed" and thus be made usable (i.e., able to be programmed) again.

  Recently Added Patents
Signal processor and signal processing method
Assisted hybrid mobile browser
ESD protection device and method for producing the same
Motor vehicle, toy and/or replica
Fuser member having composite outer layer
Emergency power-off button with proximity alarm
Semiconductor device having a triple gate transistor and method for manufacturing the same
  Randomly Featured Patents
Cold gas spray gun
Symmetric, shielded slow wave meander line
Automated elongate insert wrapping system
Nuclear reactor plant with containment depressurization
Sputtering target
Sectionalized surfboard
Method of analytically determining optimum conditions for powder forging
Image forming apparatus and method thereof
Controller for data recorder
Machine tool