Resources Contact Us Home
Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

Image Number 7 for United States Patent #7411828.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be "unstuck" or "removed" and thus be made usable (i.e., able to be programmed) again.

  Recently Added Patents
Backside structure and methods for BSI image sensors
Data-conditioned encryption method
Soliciting first party in communication session to maintain call when degradation of connection to second party is anticipated
Organic light emitting diode light source device
Remote ignition system for a vehicle and method for securing a remote ignition function
Gaze tracking password input method and device utilizing the same
Beverage container lid
  Randomly Featured Patents
Upstream bandwidth conditioning device
Electrostatic discharge protection circuit
Reaction cell for protein sequencer and the like
Radio frequency signal receiver for controlling bias current and method for controlling bias current
Basic mono- and bisazo compounds
Code reading apparatus
Radiant barrier apparatus
Mallet percussion instruments
Dispenser for media
Interactive talking toy with moveable and detachable body parts