Resources Contact Us Home
Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

Image Number 7 for United States Patent #7411828.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be "unstuck" or "removed" and thus be made usable (i.e., able to be programmed) again.

  Recently Added Patents
Battery pack system
Dynamic mode transitions for cache instructions
Nucleobindin I variant protein compositions and methods of use
Compact wheeled medical equipment stand
Maize variety hybrid X85A663
Lens-mounted light emitting unit
Shaped body containing porous aromatic framework material
  Randomly Featured Patents
Cathode construction for a laser
Mechanism correcting a trembling of focused image
PLL/DLL circuitry programmable for high bandwidth and low bandwidth applications
Composite package for explosive items
Locking unit for a telescopic jib of a crane and telescopic jib
Preparation of phytosphingosine derivative
Rotor of rotary electric machine having commutator surface facing axial rear end
Method of molding a synthetic resin container
Method for encoding digital information
Portable metal drum opening apparatus