Resources Contact Us Home
Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

Image Number 7 for United States Patent #7411828.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be "unstuck" or "removed" and thus be made usable (i.e., able to be programmed) again.

  Recently Added Patents
Sitagliptin intermediate compounds, preparation methods and uses thereof
Programming method of non-volatile memory device
Color LED display device without color separation
Low power voltage controlled oscillator (VCO)
Energy storage device package
Information processing using batch setting information
Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
  Randomly Featured Patents
Installation clip device for electrical cables
Pentafluorosulfur imino heterocyclic compounds as BACE-1 inhibitors, compositions and their use
Monoclonal antibodies to human leukemia inhibitory factor
Array sensor electronics
Battery housing
Coated package with filter profile
Method and apparatus for detecting a contaminated alcohol-gasoline fuel mixture
Optoelectronic transmitting and/or receiving module, circuit carrier, module housing, and optical plug
Interchangeable ring
Foot prosthesis having cushioned ankle