Resources Contact Us Home
Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

Image Number 7 for United States Patent #7411828.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be "unstuck" or "removed" and thus be made usable (i.e., able to be programmed) again.

  Recently Added Patents
System and method for dynamic quality-of-service-based billing in a peer-to-peer network
System and method for efficient association of a power outlet and device
System and method for detecting states
Method and system for placing an emergency call
Electronic package with fluid flow barriers
Method and apparatus for providing spin-home function for mobile communication terminal
System, method, and software for researching, analyzing and comparing expert witnesses
  Randomly Featured Patents
Eclosion hormone peptides
Electromechanical filter and resonator
Color changing tape, label, card and game intermediates
Blow line addition of isocyanate binder in fiberboard manufacture
System and method for energy capture and distribution
Aryl-imidazolines and aryl-imidazoles useful as .alpha.-2 adrenergic agonists without cardiovascular side effects
Amino acid derivatives and their use as a sag control agent
Baffled breather tube
Water distribution tray
Method of fabricating vertical structure LEDs