Resources Contact Us Home
Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

Image Number 7 for United States Patent #7411828.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be "unstuck" or "removed" and thus be made usable (i.e., able to be programmed) again.

  Recently Added Patents
Device and method for controlling brightness of organic light emitting diode display
Dynamic web page construction based on determination of client device location
Use of Lactobacillus for liver protection
Personalized location information for mobile devices
Substituted bicyclic HCV inhibitors
Method and system for remotely testing a wireless device
Automatic baroreflex modulation responsive to adverse event
  Randomly Featured Patents
Fiber optic coupler, optical fiber useful with the coupler and/or a pump light source, and methods of coupling light
Method of preparing photochromic article
Foldable massaging mattress
Isolation amplifier
Mobile device, method and computer program product for displaying images on a display screen
Time-division multiplexed link for use in a service area network
Fast torque control of a belted alternator starter
Firefighting nozzle
Method for selecting adsorptive composite barriers for packaging applications
Air bag system