Resources Contact Us Home
Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

Image Number 11 for United States Patent #7411828.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be "unstuck" or "removed" and thus be made usable (i.e., able to be programmed) again.

  Recently Added Patents
Refuelable battery-powered electric vehicle
Fluid conduit with PTC fabric heating
Cell proliferation inhibitor
Electric motor
Sericin cationic nanoparticles for application in products for hair and dyed hair
Flip-chip mounting resin composition and bump forming resin composition
Method for isomerisation of hop alpha-acids using heterogeneous alkaline earth metal based catalysts
  Randomly Featured Patents
Mini air spray gun body
Hydraulically arranged nonwoven webs and method of making same
Guanidinoalkyl glycine .beta.-amino acids useful for inhibiting tumor metastasis
Printing device
Procedure for construction of multi-layer cylindrical containers and containers so obtained
Environmentally protected pressure transducers employing two electrically interconnected transducer arrays
Process for producing Peltier modules, and Peltier module
Light emitting diodes with smooth surface for reflective electrode
Process for the recovery of cobalt and manganese from oxidation residue incinerator ash, pyrolysis sand and pyrolysis char
Power drive control device of an automatic door