Resources Contact Us Home
Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

Image Number 11 for United States Patent #7411828.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be "unstuck" or "removed" and thus be made usable (i.e., able to be programmed) again.

  Recently Added Patents
Method and system for remotely testing a wireless device
Workflow-enabled client
Parasitic element compensation circuit and method for compensating for the parasitic element
Node and wireless sensor network comprising the node
Proximity-based mobile message delivery
Network attachment for IMS systems for legacy CS UE with home node B access
Braided pull tug pet toy
  Randomly Featured Patents
Method for producing a capping wafer for a sensor
Storage device for liquids
Anthracycline antibiotics
Method and apparatus for image acquisition, organization, manipulation, and publication
Inflatable archway
Folding structure
Electrode for electrosurgical procedure
Supported catalyst for demetalation and desulfurization of hydrocarbon oils
Candle and array
Synthesis of the breast tumor-associated antigen defined by monoclonal antibody MBr1 and uses thereof