Resources Contact Us Home
Method and apparatus for programming single-poly pFET-based nonvolatile memory cells

Image Number 11 for United States Patent #7411828.

Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be "unstuck" or "removed" and thus be made usable (i.e., able to be programmed) again.

  Recently Added Patents
Simulating non power of two texture behavior
Image processing device and information storage medium including motion vector information calculation
Picture quality control method and image display using same
Squib control circuit
Flexure with insulating layer isolating a portion of a metal substrate
Listing recommendation using generation of a user-specific query in a network-based commerce system
  Randomly Featured Patents
Branched water-soluble polymers and their conjugates
Porcupine wire coil electric resistance fluid heater
Flux focusing arrangement for permanent magnets, methods of fabricating such arrangements, and machines including such arrangements
High fill ratio reflective spatial light modulator with hidden hinge
System and method utilizing virtual switching for upgrading multifunction devices
Indexing methods, systems, and computer program products for virtual three-dimensional books
Semiconductor device and alignment apparatus and alignment method for same
Convertible sofa bed
Ink-jet recording method, ink-jet recording apparatus and recorded matter
Semiconductor lithography process