Resources Contact Us Home
Method of manufacturing a superjunction device

Image Number 6 for United States Patent #7410891.

A partially manufactured semiconductor device includes a semiconductor substrate. The device includes a first oxide layer formed on the substrate, with a mask placed over the oxide-covered substrate, a plurality of first trenches and at least one second trench etched through the oxide layer forming mesas. The at least one second trench is deeper and wider than each of the first trenches. The device includes a second oxide layer that is disposed over an area of mesas and the plurality of first trenches. The device includes a layer of masking material that is deposited over a an area of an edge termination region adjacent to an active region. The area of mesas and first trenches not covered by the masking layer is etched to remove the oxidant seal. The device includes an overhang area that is formed by a wet process etch.

  Recently Added Patents
Circuit and method for generating an AC voltage from a plurality of voltage sources having a temporally variable DC output voltage
Wild card auto completion
Systems and methods for generating customized user interfaces
Method and device for determining processed image data about a surround field of a vehicle
System and method for supporting fibre channel over ethernet communication
Transmitting apparatus and retransmitting method
Method and system for encrypting data in a wireless communication system
  Randomly Featured Patents
Shift control apparatus for automatic transmission
Antiskid traction device
Vanadium (IV) metallocene complexes having spermicidal activity
Pseudolite-augmented GPS for locating wireless telephones
Audio pod for a communication device
Deformable modular armored combat system
Control of ammonia emission and odor
Ramming device to be assigned to a rock breaker
Anonymous authenticated communications
Methods of making carbide and oxycarbide containing catalysts