Resources Contact Us Home
Method of manufacturing a superjunction device

Image Number 6 for United States Patent #7410891.

A partially manufactured semiconductor device includes a semiconductor substrate. The device includes a first oxide layer formed on the substrate, with a mask placed over the oxide-covered substrate, a plurality of first trenches and at least one second trench etched through the oxide layer forming mesas. The at least one second trench is deeper and wider than each of the first trenches. The device includes a second oxide layer that is disposed over an area of mesas and the plurality of first trenches. The device includes a layer of masking material that is deposited over a an area of an edge termination region adjacent to an active region. The area of mesas and first trenches not covered by the masking layer is etched to remove the oxidant seal. The device includes an overhang area that is formed by a wet process etch.

  Recently Added Patents
Multi-channel memory system including error correction decoder architecture with efficient area utilization
Fire detector
Electrical conduit containing a fire-resisting thermoplastic composition
Message value indicator
Enterprise seamless mobility
RFID device using single antenna for multiple resonant frequency ranges
  Randomly Featured Patents
Dispensing cap with internal measuring chamber
Counter with glitchless terminal count indication
Probe system
Single turn variable resistance device having a split shaft rotor
Ultrasonic probe and ultrasonic diagnostic apparatus
Adaptive sampling along edges for surface rendering
Hybrid printing device
Hood having an integral strain relief for use with electrical connectors
Radio frequency identification packaging system
Multilayer-film reflective mirrors and optical systems comprising same