Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Resistor integration structure and technique for noise elimination










Image Number 4 for United States Patent #7384855.

A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.








 
 
  Recently Added Patents
Polynucleotide capture materials, and methods of using same
Method for detection and characterization of a microorganism in a sample using time-dependent intrinsic fluorescence measurements
Frequency offset estimation apparatus and method of OFDM system
Cable preparation tool
Method for mapping resource units
Pressure-sensitive adhesive composition for optical films, pressure-sensitive adhesive optical film and image display
Reduced plating ignitron
  Randomly Featured Patents
Cellular phone
Intelligent container
Automatic distributor of stacked packages
RF to optical converter for RF imaging with optical sensors
Temperature control of MW in olefin polymerization using supported metallocene catalyst
Frame for pressurized fluid-operating devices
Method and system for calibrating an oscillator circuit using a network based time reference
Nanoparticulate diagnostic dimers as x-ray contrast agents for blood pool and lymphatic system imaging
Cover
Inflatable child holder