Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Resistor integration structure and technique for noise elimination










Image Number 4 for United States Patent #7384855.

A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.








 
 
  Recently Added Patents
Formwork release composition and use thereof
Methods and devices for rapid and specific detection of multiple proteins
Organic EL display device and method for manufacturing the same
Image forming system, printing control method, and program
Portable massage apparatus
Method and apparatus for controlling peak amplifier and doherty power amplifier
Method and systems for detecting duplicate travel path
  Randomly Featured Patents
Ball bushing
Pivotal electrical connector
Rewritable, color image recording medium and image recording method using same
Pulsation nozzle, for self-excited oscillation of a drilling fluid jet stream
Housing cover
Carving set case
Method for determining at least one geometric postural parameter when fitting a corrective spectacle frame on the face of a wearer in the anatomical posture thereof
Handling writes to a memory including asymmetric and symmetric components
Bulk stamped amorphous metal magnetic component
Sensing assembly for detection of one or more plants