Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Resistor integration structure and technique for noise elimination










Image Number 4 for United States Patent #7384855.

A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.








 
 
  Recently Added Patents
MOS transistor having combined-source structure with low power consumption and method for fabricating the same
Safety device and method for electric heating appliances
Method and structure for forming ETSOI capacitors, diodes, resistors and back gate contacts
System and method for improving cache efficiency
Systems and methods for restoring images
Nickel-cobalt-manganese multi-element lithium ion battery cathode material with dopants and its methods of preparation
Device and method for quantizing and inverse quantizing LPC filters in a super-frame
  Randomly Featured Patents
Pressureless infeed conveyor table
Method and apparatus for rendering graphical components on a display utilizing geometric constraints
Rapid rate reactive sputtering of a group IVb metal
Automatic temperature adjusting type air conditioner
Multi-chamber chemiluminescent optical display device
Process for the preparation of macrocyclic chelants and the chelates thereof with paramagnetic metal ions
Lighted jewelry
Timber harvester
Proactive predictive preventative network management technique
Mirror mount for photographic optical system