Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Resistor integration structure and technique for noise elimination










Image Number 4 for United States Patent #7384855.

A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.








 
 
  Recently Added Patents
System and method for enhancing buyer and seller interaction during a group-buying sale
Methods for selective reverse mask planarization and interconnect structures formed thereby
Methods and apparatus for determining a phase error in signals
Transmission apparatus, receiving apparatus, method, and storage medium
Photographic printing paper and method of making same
System and method for detecting crop rows in an agricultural field
Recording device, recording method, and program
  Randomly Featured Patents
Method of securing a graft using a graft fixation device
Earring
Method for fabricating a layer arrangement, layer arrangement and memory arrangement
Shrimp forming process
LED with light emission on all sides
Inverter control device and AC motor control device using this inverter control device
Acicular ferric oxide for magnetic recording and process for producing same
Oscillator circuit with a fast transient
Method of coating a UV-fiber with blocking layers and charging the fiber with hydrogen or deuterium
Prevention and treatment of sub-clinical PCVD