Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of manufacturing semiconductor device










Image Number 5 for United States Patent #7374978.

A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the mask. The silicon films are then heated by rapid thermal annealing (RTA). By virtue of the existence of the amorphous silicon film, the temperature of the crystalline silicon film is increased uniformly, whereby the portion of the crystalline silicon film covered with the mask is also heated sufficiently and the catalyst element existing in this region moves to the phosphorus-implanted, amorphous portion having high gettering ability. As a result, the concentration of the catalyst element is reduced in the portion of the silicon film covered with the mask. A semiconductor device is manufactured by using this portion.








 
 
  Recently Added Patents
Method for mapping resource units
Use of endogenous promoters in genetic engineering of Nannochloropsis gaditana
Orthogonal tunable antenna array for wireless communication devices
Method and device for evaluating evolution of tumoural lesions
Flame-protected impact-modified polycarbonate compositions
Audio/video program-related hyperlink printer
System and method for backup communication over ethernet
  Randomly Featured Patents
Inhibitors of farnesyl-protein transferase
Sealing dental collet
Image forming apparatus
Diagnostic system for compactor/baler apparatus
Non-aqueous electrochemical cells
Light limiter
Multi-band communications for a single wireless base station
Fluid treatment system
Sensitized stainless steel having integral normalized surface region
Equipment in a data network and methods for monitoring, configuring and/or managing the equipment