Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of manufacturing semiconductor device










Image Number 5 for United States Patent #7374978.

A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the mask. The silicon films are then heated by rapid thermal annealing (RTA). By virtue of the existence of the amorphous silicon film, the temperature of the crystalline silicon film is increased uniformly, whereby the portion of the crystalline silicon film covered with the mask is also heated sufficiently and the catalyst element existing in this region moves to the phosphorus-implanted, amorphous portion having high gettering ability. As a result, the concentration of the catalyst element is reduced in the portion of the silicon film covered with the mask. A semiconductor device is manufactured by using this portion.








 
 
  Recently Added Patents
Stretchable elastic laminate having increased CD elongation zones and method of production
Telephone line seizure module
Portable computer
Equipment to facilitate money transfers into bank accounts
Using storage cells to perform computation
Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
SRB enhancement on HS-DSCH during cell change
  Randomly Featured Patents
Electric circuit substrate apparatus
Electronic connecting device
Barbecue grill
Peeling device and peeling method
Combined radio and tape player
Detachable wire matrix print head mounting structure
Battery and method of power conservation for the same
Bearing support for submerged rolls in hot dip coating operation
Antimicrobial use of heat-treated lactic and/or glycolic acid compositions for treatment of ground meats
Ultraviolet curable silver composition and related method