Resources Contact Us Home
Method of manufacturing semiconductor device

Image Number 5 for United States Patent #7374978.

A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the mask. The silicon films are then heated by rapid thermal annealing (RTA). By virtue of the existence of the amorphous silicon film, the temperature of the crystalline silicon film is increased uniformly, whereby the portion of the crystalline silicon film covered with the mask is also heated sufficiently and the catalyst element existing in this region moves to the phosphorus-implanted, amorphous portion having high gettering ability. As a result, the concentration of the catalyst element is reduced in the portion of the silicon film covered with the mask. A semiconductor device is manufactured by using this portion.

  Recently Added Patents
Processes for producing polyunsaturated fatty acids in transgenic organisms
Method and apparatus for variable accuracy inter-picture timing specification for digital video encoding
Remote controller
Portable reading device with mode processing
Method of analyzing cell structures and their components
Method and system for shared high speed cache in SAS switches
Combining seismic data from sensors to attenuate noise
  Randomly Featured Patents
Portable fluid-transporting system
Method for accurately extracting library-based object-oriented applications
Full-time transfer case with syncronized range shift arrangement
Modular aircraft with removable spar
Method and apparatus for transmitting and recieving multiplex tributary signals
Process for production of ethylbenzene from dilute ethylene streams
Constant contact side bearing assembly with improved cap machining for a railcar
Pharmaceutical and dietary composition
Method and device for diagnosing trouble with sensor function