Resources Contact Us Home
Single-crystal silicon-on-glass from film transfer

Image Number 7 for United States Patent #7361574.

A method is provided for transferring a single-crystal silicon (Si) film to a glass substrate. The method deposits a germanium (Ge)-containing material overlying a Si wafer, forming a sacrificial Ge-containing film. A single-crystal Si film is formed overlying the sacrificial Ge-containing film. The Si film surface is bonded to a transparent substrate, forming a bonded substrate. The bonded substrate is immersed in a Ge etching solution to remove the sacrificial Ge-containing film, which separates the transparent substrate from the Si wafer. The result is a transparent substrate with an overlying single crystal Si film. Optionally, channels can be formed to distribute the Ge etching solution, and promote the removal of the Ge-containing film.

  Recently Added Patents
Medical injector
Light receiving element with offset absorbing layer
Compression molding method and reinforced thermoplastic parts molded thereby
Semiconductor memory device, method of controlling read preamble signal thereof, and data transmission method
Device, system, and method for logging near field communications tag interactions
Integrated transmit/receive switch
  Randomly Featured Patents
Peach rootstock named MP-29
Biologically active complex of NR6 and cardiotrophin-like-cytokine
Method for forming side contact in semiconductor device through self-aligned damascene process
Trial neuro stimulator with lead diagnostics
Alkylation process
Image forming apparatus and image forming method
Product valve complex for dual stream filling system
Method of treating arrhythmia
Floribunda rose plant named `POULelap`