Resources Contact Us Home
Single-crystal silicon-on-glass from film transfer

Image Number 7 for United States Patent #7361574.

A method is provided for transferring a single-crystal silicon (Si) film to a glass substrate. The method deposits a germanium (Ge)-containing material overlying a Si wafer, forming a sacrificial Ge-containing film. A single-crystal Si film is formed overlying the sacrificial Ge-containing film. The Si film surface is bonded to a transparent substrate, forming a bonded substrate. The bonded substrate is immersed in a Ge etching solution to remove the sacrificial Ge-containing film, which separates the transparent substrate from the Si wafer. The result is a transparent substrate with an overlying single crystal Si film. Optionally, channels can be formed to distribute the Ge etching solution, and promote the removal of the Ge-containing film.

  Recently Added Patents
High-resolution, active reflector radio frequency ranging system
Real-time demand prediction in a fast service restaurant environment
Method and apparatus for distributing promotional materials
Automatically capturing images that include lightning
Transfer device and image forming apparatus including regulation member
System and method for ranking content and applications through human assistance
Hydroxylated amide skin moisturizer
  Randomly Featured Patents
Wall bracket
Mounting a planar light wave circuit in a housing
Environmental sensor, particle counting system having an environmental sensor, and methods of operating the same
Combined cryotherapy and brachytherapy device and method
Glove box assembly exhibiting knee impact force transferring structure with respect to an associated vehicle dash/instrument panel and reinforcing bar and including removable strengthening rib
Jewelry clasp
Roller skate with brake
Thin-film transistor
Lighting device having a support member that supports multiple lenses
Support head