Resources Contact Us Home
Single-crystal silicon-on-glass from film transfer

Image Number 7 for United States Patent #7361574.

A method is provided for transferring a single-crystal silicon (Si) film to a glass substrate. The method deposits a germanium (Ge)-containing material overlying a Si wafer, forming a sacrificial Ge-containing film. A single-crystal Si film is formed overlying the sacrificial Ge-containing film. The Si film surface is bonded to a transparent substrate, forming a bonded substrate. The bonded substrate is immersed in a Ge etching solution to remove the sacrificial Ge-containing film, which separates the transparent substrate from the Si wafer. The result is a transparent substrate with an overlying single crystal Si film. Optionally, channels can be formed to distribute the Ge etching solution, and promote the removal of the Ge-containing film.

  Recently Added Patents
Motorized home appliance door
Signal processing apparatus and methods
Shot scent dispenser
Power generating apparatus of renewable energy type and method of attaching and detaching blade
Reconstruction of deforming surfaces by canceling ambient occlusion and refining 3-D shape
Packaging article
Non-zero rounding and prediction mode selection techniques in video encoding
  Randomly Featured Patents
Electric power steering device
Method and apparatus for simultaneously loading a plurality of tape cassettes
Use of high viscosity, meltable gel inks for controlling bleed
Measurement of channel characteristics in a communication system
Photodetector and optical receiver
Managing method and apparatus for servicing contents provided by content provider
Pharmaceutical compositions in the form of sustained-release tablets based on high molecular weight polysaccharide granules
Boat lift
Joining method of aluminum member to dissimilar metal member
Pet earring