Resources Contact Us Home
Single-crystal silicon-on-glass from film transfer

Image Number 7 for United States Patent #7361574.

A method is provided for transferring a single-crystal silicon (Si) film to a glass substrate. The method deposits a germanium (Ge)-containing material overlying a Si wafer, forming a sacrificial Ge-containing film. A single-crystal Si film is formed overlying the sacrificial Ge-containing film. The Si film surface is bonded to a transparent substrate, forming a bonded substrate. The bonded substrate is immersed in a Ge etching solution to remove the sacrificial Ge-containing film, which separates the transparent substrate from the Si wafer. The result is a transparent substrate with an overlying single crystal Si film. Optionally, channels can be formed to distribute the Ge etching solution, and promote the removal of the Ge-containing film.

  Recently Added Patents
Hardware/software debugging using memory access parameters
Methods and system for displaying segmented images
Device for accurately measuring concentration of component in blood and control method of the device
Electronic system auto-mute control circuit and control method thereof
Method for building taxonomy of topics and categorizing videos
Power management implementation in an optical link
Active element machine computation
  Randomly Featured Patents
Granulated agent and catalyst used for oxygen generation
Active noise cancellation system, arrangement, and method
Automatic adjustable width chuck apparatus for tire testing systems
Method for fabricating light weight pipe connectors
Noise canceller
Method of evaluating a solid state image sensor using frequency distribution profile
5-HT.sub.1A ligands
Method and apparatuses for creating a full text index accommodating child words
Inhibitors of prenyl-protein transferase
Explosive connecting cord