Resources Contact Us Home
Single-crystal silicon-on-glass from film transfer

Image Number 7 for United States Patent #7361574.

A method is provided for transferring a single-crystal silicon (Si) film to a glass substrate. The method deposits a germanium (Ge)-containing material overlying a Si wafer, forming a sacrificial Ge-containing film. A single-crystal Si film is formed overlying the sacrificial Ge-containing film. The Si film surface is bonded to a transparent substrate, forming a bonded substrate. The bonded substrate is immersed in a Ge etching solution to remove the sacrificial Ge-containing film, which separates the transparent substrate from the Si wafer. The result is a transparent substrate with an overlying single crystal Si film. Optionally, channels can be formed to distribute the Ge etching solution, and promote the removal of the Ge-containing film.

  Recently Added Patents
Surface acoustic wave resonator for down-hole applications
Messenger bag
Snapshot isolation support for distributed query processing in a shared disk database cluster
Identifying multi-component carrier cells
Network decoys
Highly detectable pilot structure
White polyester film and surface light source therewith
  Randomly Featured Patents
Process for measuring magnesium in biological fluids
Muffin tray
Manufacturing execution system for use in manufacturing baby formula
Power transmission device
Cardiac output estimation method and apparatus
Mattress for accommodating bedpan or therapeutic device
Method for manufacturing a low-impedance, planar metallization composed of aluminum or of an aluminum alloy
Substituted pyrimidin-2-ones, the salts thereof, pharmaceutical compositions containing them and a method therefor
Method, system and program products for managing cluster configurations