Resources Contact Us Home
Multiple-depth STI trenches in integrated circuit fabrication

Image Number 3 for United States Patent #7354812.

Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause some of the trenches to fill or close off while leaving other, wider trenches open. Removal of a portion of the dielectric material can then be tailored to expose a bottom of the open trenches while leaving remaining trenches filled. Removal of exposed portions of the underlying substrate can then be used to selectively deepen the open trenches, which can subsequently be filled. Such methods can be used to form trenches of varying depths without the need for subsequent masking.

  Recently Added Patents
Conductive polymer and a solid electrolytic capacitor using the same as a solid electrolyte
Electrode structure and its manufacturing method, and semiconductor module
Magnetic levitation motor used in lens module
Author signatures for legal purposes
Synergistic fungicidal interactions of 5-fluorocytosine and other fungicides
Editing device and editing method
Electro-optical device, method of manufacturing the same, and electronic apparatus
  Randomly Featured Patents
Crimping apparatus for terminal
Gas-containing product supporting structure and package
Masking member
Catalysts for the purification of exhaust gas
CPU-controlled, rearming electronic animal trap with three-killing-plate configuration
Digital broadcasting system and data processing method
Method and apparatus for removing fuel gun from boiler
System and method for variable depth ultrasound treatment
Novel peptides possessing a macrophage chemotactic activity