Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Multiple-depth STI trenches in integrated circuit fabrication










Image Number 3 for United States Patent #7354812.

Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause some of the trenches to fill or close off while leaving other, wider trenches open. Removal of a portion of the dielectric material can then be tailored to expose a bottom of the open trenches while leaving remaining trenches filled. Removal of exposed portions of the underlying substrate can then be used to selectively deepen the open trenches, which can subsequently be filled. Such methods can be used to form trenches of varying depths without the need for subsequent masking.








 
 
  Recently Added Patents
Device and method for processing input data of protective relay
Light-emitting device
Method and apparatus for managing communication services for user endpoint devices
Thermoplastic fluoropolymer composition
Functionalized main chain polymers
Adaptive flow for thermal cooling of devices
Emergency whistle, flashlight, and compass
  Randomly Featured Patents
Two-cycle lubricating oil
Apparatus for separating foreign solid particles from a liquid
Beverage bottling plant for filling bottles with a liquid beverage filling material, having container handling machines with carrying pockets
System and method providing custom attack simulation language for testing networks
Picture puzzle
Traffic cone
Method and system for parallel demodulation of multiple chips of a CDMA signal
Friction clutch and vehicle equipped with the same
Decorative message display
Alicyclic nortricyclene polymers and co-polymers