Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Multiple-depth STI trenches in integrated circuit fabrication










Image Number 3 for United States Patent #7354812.

Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause some of the trenches to fill or close off while leaving other, wider trenches open. Removal of a portion of the dielectric material can then be tailored to expose a bottom of the open trenches while leaving remaining trenches filled. Removal of exposed portions of the underlying substrate can then be used to selectively deepen the open trenches, which can subsequently be filled. Such methods can be used to form trenches of varying depths without the need for subsequent masking.








 
 
  Recently Added Patents
Error protection for pipeline resources
Mineral, nutritional, cosmetic, pharmaceutical, and agricultural compositions and methods for producing the same
Semiconductor device
Rules-based approach to transferring and/or viewing medical images
Floor relief for dot improvement
System and method for providing private demand-driven pricing
Semiconductor devices having through electrodes and methods of fabricating the same
  Randomly Featured Patents
Sagittal saw blade base
Self-ventilating infra-red ray heater
Method for forming a thin film transistor
Toolholder having impeller-type coolant inducer
Heating-fixing device
RF MEMs-tuned slot antenna and a method of making same
Apparatus and method for wafer pattern inspection
Dispenser for dispensing variable amounts of a granular material
Connector and a connector assembly
Signal compression system for binary digital signals