Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Multiple-depth STI trenches in integrated circuit fabrication










Image Number 3 for United States Patent #7354812.

Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause some of the trenches to fill or close off while leaving other, wider trenches open. Removal of a portion of the dielectric material can then be tailored to expose a bottom of the open trenches while leaving remaining trenches filled. Removal of exposed portions of the underlying substrate can then be used to selectively deepen the open trenches, which can subsequently be filled. Such methods can be used to form trenches of varying depths without the need for subsequent masking.








 
 
  Recently Added Patents
Decontamination apparatus and method
Anti-infective derivatives, method for the production thereof, pharmaceutical compositions containing same and uses of said derivatives in treatment
Method and apparatus for the prevention of a service degradation attack
Feature management of a communication device
Performance monitoring of advanced process control systems
Power management systems and designs
Preamplifier-to-channel communication in a storage device
  Randomly Featured Patents
Portable sealing device
Polishing pad and surface polishing method
Nail file/buffer
Semantic management method for logging or replaying non-deterministic operations within the execution of an application process
Light unit and liquid crystal display device having the same
Universal electrical socket apparatus
Multi-chip graphics processing unit apparatus, system, and method
Canister module
Fine-adjusting apparatus for an overhead projector
Hearing aid