Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Multiple-depth STI trenches in integrated circuit fabrication










Image Number 3 for United States Patent #7354812.

Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause some of the trenches to fill or close off while leaving other, wider trenches open. Removal of a portion of the dielectric material can then be tailored to expose a bottom of the open trenches while leaving remaining trenches filled. Removal of exposed portions of the underlying substrate can then be used to selectively deepen the open trenches, which can subsequently be filled. Such methods can be used to form trenches of varying depths without the need for subsequent masking.








 
 
  Recently Added Patents
Synchronization of sound generated in binaural hearing system
Method and apparatus for rebuilding data in a dispersed data storage network
Socket type MEMS device with stand-off portion
Image processing apparatus, image processing method, and program
Method for delivering a volatile material
System and method for the heterologous expression of polyketide synthase gene clusters
Method for manufacturing semiconductor device
  Randomly Featured Patents
Image display device using high-voltage electrodes and method of driving same
Method and system for mounting a detector
Bi-stable pressure maintaining gas containers
Antiinflammatory azole derivatives
Level
Engine fuel injection control method with fuel puddle modeling
Method for controlling transistor spacer width
Electrochemical apparatus and method of manufacturing the same
Voice activated date rate change in simultaneous voice and data transmission
Quality software management process