Resources Contact Us Home
Multiple-depth STI trenches in integrated circuit fabrication

Image Number 3 for United States Patent #7354812.

Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause some of the trenches to fill or close off while leaving other, wider trenches open. Removal of a portion of the dielectric material can then be tailored to expose a bottom of the open trenches while leaving remaining trenches filled. Removal of exposed portions of the underlying substrate can then be used to selectively deepen the open trenches, which can subsequently be filled. Such methods can be used to form trenches of varying depths without the need for subsequent masking.

  Recently Added Patents
Pipe coupling
Vehicle and method for controlling vehicle
Wireless device and communication control method
Lighting elements
Wavelength and power scalable waveguiding-based infrared laser system
Method and apparatus for accessing coconut water
Lighting apparatus
  Randomly Featured Patents
Piezoelectric transducer
Optimizing RF power spatial distribution using frequency control
Microemulsion method for improving the injectivity of a well
Armor piercing small caliber projectile
Multiple stage blowers and volutes therefor
Water-based coating compositions comprising epoxy-containing acrylic polymers an polyfunctional water-soluble amines
Enterprise service architecture platform architecture for multi-application computer system
Differential diagnostic assay for brucellosis
Buttress for cardiac valve reconstruction
Switching regulator