Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Nitride-based heterostructure devices










Image Number 9 for United States Patent #7348606.

A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.








 
 
  Recently Added Patents
Insulator strength by seat geometry
Method and apparatus for efficiently routing packets across disparate networks
Inhibition of cell proliferation
Class-AB power amplifier
Flexible antenna
Anti-TrkB antibodies
Expansion module
  Randomly Featured Patents
Data display for multiple layered screens
Method and apparatus for use of silent symbols in a communications network
Multiple electron beam vacuum vapor deposition apparatus
Punch, apparatus and method for forming opposing holes in a hollow part, and a part formed therefrom
Extension handle apparatus for a wheeled chair
Swing amount magnifying mechanism
Middle handle portion for a floor cleaner
Device for biasing a cylinder drum of a variable-displacement axial piston machine against an associated slide valve member
Compounds and their uses 707
Tensioning device for a gymnastics apparatus