Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Nitride-based heterostructure devices










Image Number 9 for United States Patent #7348606.

A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.








 
 
  Recently Added Patents
Rain barrel
Navigational cube for matching vendor offerings to service provider requirements
Packet transmission method, apparatus, and network system
Dynamic trunk distribution on egress
Nano-pigment inkjet ink composition that has a low odor and is environmentally-friendly
Compositions and methods for producing isoprene
High-efficiency preambles for communications systems over pseudo-stationary communication channels
  Randomly Featured Patents
Biomimetic reagent system and its use
Secure document access system
Heat exchanger for transferring heat to a liquid
Stacked patch antenna
Support for shadow mask in a cathode ray tube
Preparation of macroreticular polymers
MEMS packaging structure and methods
Small coin hopper
Multiple step methods for forming conformal layers
Three dimensional display control apparatus and method, and storage medium