Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Nitride-based heterostructure devices










Image Number 9 for United States Patent #7348606.

A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.








 
 
  Recently Added Patents
Re-establishing push notification channels via user identifiers
Mobile communication method, mobile station, and network device
System and method for performing image correction
Music composition automation including song structure
Handover signaling in wireless networks
Electronic system auto-mute control circuit and control method thereof
Granulated sweetening composition
  Randomly Featured Patents
Radiation detection system
Method of forming a multi-terminator optical interconnect system
Semiconductor laser array with stripe electrodes having pads for wire bonding
Electrical connector embodying electrical circuit components
Aryl phenylcyclopropyl sulfide derivatives and their use as cell adhesion inhibiting anti-inflammatory and immune suppressive agents
Roller head opening and closing apparatus in roller head extruder
Air bag module
Method for disposing of organohalogen compounds by oxidative decomposition
High power pulse compression techniques
Electrical multi-pole plug-and-socket-type connector with associated socket part