Resources Contact Us Home
Nitride-based heterostructure devices

Image Number 9 for United States Patent #7348606.

A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

  Recently Added Patents
Data unit receiver and sender control method
Image processing apparatus and method configured to calculate defocus amount of designated area
Image forming apparatus and system connectable with an authorization apparatus via a communications network, the image forming apparatus comprising an apparatus control section, an initial inq
Apparatus for transmitting and receiving data in a wireless communication system and method thereof
Fuel cell system, and electric vehicle equipped with the fuel cell system
Developing device
  Randomly Featured Patents
Device and a method of playing audio clips
Antimicrobial composition comprising a mixture of lactic acid or a derivative thereof and an inorganic acid
Cooling means for torque converter bypass
Multiplex composite powder used in a core for thermal spraying and welding, its method of manufacture and use
In-line fluorescent x-ray film thickness monitor
Communication apparatus having alternate message communication
Antifungal fragrance composition
Liquid-ejecting head and liquid-ejecting apparatus
Multi-piece golf ball
Lock processing system