Resources Contact Us Home
Nitride-based heterostructure devices

Image Number 9 for United States Patent #7348606.

A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

  Recently Added Patents
Cantilevered probe detector with piezoelectric element
Method for forming pattern
Systems and methods for generating customized user interfaces
Single mode optical fiber with improved bend performance
Cosmetic or pharmaceutical peptides containing uncoded amino acids and their use in the treatment and/or care of the skin, mucous membranes, or scalp
Salts and polymorphs of desazadesferrithiocin polyether analogues as metal chelation agents
Method for preparing a .beta.-SiAlON phosphor
  Randomly Featured Patents
Method and apparatus for analyzing the composition of an electro-deposition coating material and method and apparatus for controlling said composition
Method and apparatus for diagnosing a twin-coil, bi-stable, magnetically latched solenoid
Method and apparatus for producing sealing washers
Buffer transfer in a communications network
Method of making strip-covered roll
Universal wafer scale assembly
Compressive sampling and signal inference
Matrixes, arrays, systems and methods
Debris receptacle lid
Distributed telecommunication network