Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Nitride-based heterostructure devices










Image Number 9 for United States Patent #7348606.

A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.








 
 
  Recently Added Patents
System and method for employing signoff-quality timing analysis information concurrently in multiple scenarios to reduce dynamic power in an electronic circuit and an apparatus incorporating t
Method for generating optical codes for a print-context
Mobile communication apparatus
Methods, systems and apparatus for displaying the multimedia information from wireless communication networks
Modified polyolefin resin for glass fiber treatment, surface-treated glass fiber, and fiber-reinforced polyolefin resin
Methods and compositions to treat and detect misfolded-SOD1 mediated diseases
Interest point detection
  Randomly Featured Patents
Furniture component
Wavelength selective optical routers
Hub gear for wheeled vehicles
Interchangeable eject mechanism for use with various disk drive units
Adjustable load securement system for flat bed vehicles
Method of fabricating silicon nitride gap-filling layer
Elevator rescue operation control system including selective transformer winding energization
Method for establishing a virtual hard drive for an emulated computer system running on a host computer system
Method and device for dynamically editing received broadcast data
Semiconductor circuit and switching power supply apparatus