Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Nitride-based heterostructure devices










Image Number 9 for United States Patent #7348606.

A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.








 
 
  Recently Added Patents
Dynamic facsimile transcoding in a unified messaging platform
Apparatus with a local timing circuit that generates a multi-phase timing signal for a digital signal processing circuit
Wafer level packaging
Detection of bioagents using a shear horizontal surface acoustic wave biosensor
Light irradiation element, image forming structure, and image forming apparatus
Semiconductor integrated circuit
Snapshots in de-duplication
  Randomly Featured Patents
Seatbelt system
Fuseless plug with safety circuit breaker
Image recording apparatus with means for shut off of electric power supply to first coil in accordance with temperature of second induction heat generating member
Keyboard
Depth and puncture control for system for hemostasis of blood vessel
Suturing needle
System for reducing paging channel occupancy for message waiting indication in mobile switching centers
Water-based synthetic adhesive and method for making the same
Adhesive for packaged orthodontic appliance
System for positioning an object at a predetermined point for a digital servo device