Resources Contact Us Home
Nitride-based heterostructure devices

Image Number 9 for United States Patent #7348606.

A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

  Recently Added Patents
Packaging sleeve
System and method for a TCP mapper
Light-emitting device, film-forming method and manufacturing apparatus thereof, and cleaning method of the manufacturing apparatus
Method for producing semiconductor substrate, semiconductor substrate, method for manufacturing electronic device, and reaction apparatus
Randomly accessible visual information recording medium and recording method, and reproducing device and reproducing method
Front end for RF transmitting-receiving systems with implicit directional control and time-multiplexing method in submicron technology
Solid state lighting devices and associated methods of manufacturing
  Randomly Featured Patents
Arrangement for feeding stock to a headbox in a papermaking machine
Golf ball
Method and apparatus for signaling characteristics of a transmitted signal
Oligonucleotide modification, signal amplification, and nucleic acid detection by target-catalyzed product formation
Process for producing freeze dried meat
Control device and method for preventing red-eye effect
Position privacy in an electronic device
Methods of using high intensity focused ultrasound to form an ablated tissue area
Use of non-magnetic paths for an electronic module intended for a timepiece
Remote control of electronic devices