Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
High voltage semiconductor devices and methods for fabricating the same










Image Number 4 for United States Patent #7345341.

High voltage semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device capable of high-voltage operation, comprising a substrate comprising a first well formed therein. A gate stack is formed overlying the substrate, comprising a gate dielectric layer and a gate electrode formed thereon. A channel well and a second well are formed in portions of the first well. A source region is formed in a portion of the channel well. A drain region is formed in a portion of the second well, wherein the gate dielectric layer comprises a relatively thinner portion at one end of the gate stack adjacent to the source region and a relatively thicker portion at one end of the gate stack adjacent to and directly contacts the drain region.








 
 
  Recently Added Patents
Semiconductor IC including pulse generation logic circuit
Tactile output device for computing device notifications
Parasitic element compensation circuit and method for compensating for the parasitic element
Polarization-coupled ferroelectric unipolar junction memory and energy storage device
Milk frother
Newly identified human rhinovirus of HRV-C and methods and kits for detecting HRV-Cs
Trimming circuit and semiconductor device
  Randomly Featured Patents
Methods of terminating water flow in a subterranean formation
Blood collection assembly with blood compatible, shear sensitive gels
Method for production of polymeric nonlinear optical material
Perimeter wall lubrication system for molten metal molds
Laryngoscope
Fractional caching method and adaptive contents transmitting method using the same
Key case
Ultraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier
Aqueous fluororesin coating composition and process for producing same
Faucet spout