Resources Contact Us Home
Methods of forming capacitors

Image Number 4 for United States Patent #7329573.

A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

  Recently Added Patents
Digital photographing apparatus
Device and method for superimposing patterns on images in real time, particularly for guidance by location
Wrench head
Ion beam system and method of operating ion beam system
Stabilization of dicarbonate diesters with protonic acids
Detection of bioagents using a shear horizontal surface acoustic wave biosensor
Methods and systems providing desktop search capability to software application
  Randomly Featured Patents
Pattern-recognizing self-tuning controller
Optical laminated body
Humidity responsive control for dryers
Supply voltage abnormal condition indicating device
Memory system
Power mower with riding platform for supporting standing operator during operation
Electroactive materials
Method and apparatus for reducing glare and/or increasing privacy of a self-service device
Method for treating acute mountain sickness