Resources Contact Us Home
Methods of forming capacitors

Image Number 4 for United States Patent #7329573.

A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

  Recently Added Patents
Method and apparatus for using virtual machine technology for managing parallel communicating applications
Fuel basket spacer, apparatus and method using the same for storing high level radioactive waste
Article based on a composition containing a crosslinked blend of elastomers
Automatically capturing images that include lightning
Hemostatic devices and methods of making same
Weighted determination in configuration management systems
Methods and apparatus for voltage selection for a MOSFET switch device
  Randomly Featured Patents
Split sole dance shoe having enhanced flexibility and support
Display system utilizing digital-analog vector generation
Under ice crawler
Process for forming metal compositions containing in situ composites
Heat-holding method for food and the like
Systems and methods for handovers between base radios
Composite materials and process
Spool dispenser
Video processing apparatus and video processing method
Removable contoured insert for an extrusion die