Resources Contact Us Home
Methods of forming capacitors

Image Number 4 for United States Patent #7329573.

A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

  Recently Added Patents
Location estimation of wireless terminals through pattern matching of deduced signal strengths
Factor IXa crystals, related complexes and methods
Using location based services for determining a calling window
Method for facilitating assessment of a coursework answer and moderating the assessment
Adaptive non-positive inductor current detector (ANPICD)
LED light
  Randomly Featured Patents
Picking band wheel for a weaving machine
Portable electronic device and method therefor
Adhesiveless copper clad laminates and method for manufacturing thereof
Thin-film transistor and method of fabricating the same
Flexible software radio transceiver
Method and apparatus for relieving residual stresses
Fabrication of MEMS devices with spin-on glass
Two piece wheel for a centerline steering wheel assembly
Apparatus and method for detecting a sleep disordered breathing precursor
Method of preserving meat of slaughtered poultry or parts thereof