Resources Contact Us Home
Method of fabricating isolated semiconductor devices in epi-less substrate

Image Number 13 for United States Patent #7276431.

An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions.

  Recently Added Patents
Method and system for processing dictated information
Deflection device for a scanner with Lissajous scanning
Active matrix substrate, method for manufacturing same, and liquid crystal display apparatus
Signal judgment method, signal judgment apparatus, program, and signal judgment system
Stable liquid VEGF antagonist formulations
Systems and methods for restoring images
Method and apparatus for an active low power mode of a portable computing device
  Randomly Featured Patents
Parenteral solutions containing amiodarone in acetate buffer solution
Boat hull anti-fouling shroud
Device for aligning fish
Easy tear masking tape
Parts assembling device
Composition and methods for injection of sealants into air conditioning and refrigeration systems
Playing surface for Chinese checkerboard
Variable pulley torque drive means
Internal combustion engine