Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of fabricating isolated semiconductor devices in epi-less substrate










Image Number 13 for United States Patent #7276431.

An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions.








 
 
  Recently Added Patents
Programmable computer mouse
Reduction of HMF ethers with metal catalyst
Customizing a range of acceptable tape dimensional stability write conditions
Coffee cup stationery tab
Treatment devices with deliver-activated inflatable members, and associated systems and methods for treating the spinal cord and other tissues
Collaborative image capture
Nonvolatile memory device
  Randomly Featured Patents
Thermoplastic resin composition
Electrolytic cell
On-the-fly manipulation of spot size and cutting speed for real-time control of trench depth and width in laser operations
Application specific integrated circuit having a programmable logic core and a method of operation thereof
Method and apparatus for tracking objects and people
Coupler for optical fiber cables
Surgical needle
Method of assembling a fuse housing
Industrial scarifier assembly
Regenerative braking system for car