Resources Contact Us Home
Near-field photo-lithography using nano light emitting diodes

Image Number 4 for United States Patent #7274998.

An embodiment of the present invention is a technique to pattern features. An array of nanowires is placed at a distance to a resist layer. The array forms a plurality of light emitting diodes (LEDs). The distance corresponds to a near-field region of the light emitted by the LEDs with respect to the resist layer. A control circuit controls the LEDs to emit the light to pattern a feature in the resist layer.

  Recently Added Patents
Passive translational velocity measurement from optical information
Minimizing mismatch during compensation
Method and device for determining a set of frequencies that can be used for transmitting information between radio transceivers of a network operating with frequency hopping
Point-of-sale server and method
Physiological measuring system comprising a garment in the form of a sleeve or glove and sensing apparatus incorporated in the garment
Containers having radio frequency identification tags and method of applying radio frequency identification tags to containers
Print processing method, print relay server, control method, and storage medium to reserve print data
  Randomly Featured Patents
Image forming apparatus and control method thereof
Probe card cooling assembly with direct cooling of active electronic components
Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers
Communication assistance system and method
Submerged treadmill system for exercising animals
Closure device with screw thread
Combined business card and gum wrapper-shaped packaging therefor
Adjustable shelf system
Treatment of neurological and mental disorders
Sensor system